1997年 第14卷 第3期
利用从等离子体的实际问题引出的一些模型，研究了孤子、禁带孤波等相干结构，探索了非线性波动系统中的分岔、向混沌与湍流转变的现象、机制和控制问题． With models deduced from plasma systems, some phenomena in nonlinear wave systems are studied, such as solitons, gap solitary waves, bifurcations and transition to turbulence. The mechanism of bifurcations and control of chaos are also explored.
强电场情况下，微扰论不再适用，要精确求解Ｓｃｈｒｏｄｉｎｇｅｒ方程．本课题组用数值方法对强电场下类氢原子电离进行了计算，得到基态氢原子的共振态解，与更精确的结果作了比较，证明Ｂｒｅｉｔ－Ｗｉｇｎｅｒ近似在一定误差下是可以接受的． The Schrdinger equation of hydrogen like atoms in a strong electric field is solved by the numerical method instead of perturbation. The resonance ionization of hydrogen atom ground state is computed and comparing with exact result and Breit Wigner parametrisation is useful.
从理论角度结合实际工作，概要地介绍强激光中原子过程的特点、理论研究现状及其在激光核聚变中的可能作用． A most important feature of atomic processes in laser fusion is pointed out. The current situation of theoretical study of these processes is analyzed, then. The possible application of the theoretical study is described by a illustrative example.All of the above mentioned things are based on our practical work.
综述近年来在北师大低能所的国内第一台脉冲化高压倍加器上开展的快中子物理，及有关的实验和数据处理技术研究. The study on fast neutron physics and relative technique of experiment and data analysis made at a pulsed neutron generator in Beijing Normal University during recent yeras is introduced.
利用特征Ｘ射线源系统地测量了Ｓｉ、Ｆｅ、Ｃｕ、Ｙ、Ｉｎ、Ｓｎ等六种元素及ＳｉＨ４的Ｘ射线质量衰减系数，实验误差为±１％． By using the characteristic X ray sources and the Si( Li) detector system, the X ray mass attenuation coefficients for Si,Fe,Cu,Y,In,Sn and SiH 4 have been systematically measured in the energy range of 1.486～29.109 keV. The accuracy of experimental data has been reduced to ±1% .
概述了整体Ｘ光透镜的物理性能及其在Ｘ射线衍射技术中的应用研究，介绍了所研制的新型衍射装置及其测量结果． The basic physical properties and applications in X ray diffraction technology for the monolithic capillary lens are described. The new designed diffraction facility and its measurment results are laso introduced.
一台金属等离子体软Ｘ光源在北京师范大学低能核物理所建成．为该光源配套研制了一台高频、高压恒流充电电源．该光源工作波长为０．８～２ｎｍ，单脉冲能量大于１０Ｊ． A soft X ray source produced by metal plasma has been built in Institute of Low Energy Nuclear Physics. The characters of the source are measured.Its wavelength is 0.8～2.0 nm, pulse energy is 10 J.For this source a high frequence,high voltage power supply with constant current was developed.
为发展金属离子束材料表面改性技术的工业应用，北师大低能核物理所研制成阴极真空弧离子源和离子注入装置．简要介绍该设备的结构、原理和性能． The cathode vacuum arc ion source and ion implantation facility have been developed in our institute for industrial application of surface modification of materials. In this paper the principle structure and performance of these facilities were described.
综合评述了本课题组在金属离子注入钢强化机理、表面摩擦学、抗磨损特性、离子注入表面热化学效应、硅化物合成、表面抗氧化和抗腐蚀研究中所取得的新的实验结果． A review of our research work is given in this paper. It is about strengthening mechanism; surface trobology; resistance in wear, oxidation and corrosion; thermal atom chemistry in steel during ion implantation; silicides synthesis.
针对几种钢部件的磨损、耗能问题，本课题组应用ＭＥＶＶＡ源离子注入技术，对Ｈ１３、Ｔ１０Ａ、ＨＳＳ、Ｃｒ１７等钢材料进行了离子注入表面改性研究，得出了提高钢耐磨性和改善其固体自润滑的一套有用的离子注入工艺． Ion implantation with MEVVA source has been investigated on several types of steel such as H12,T10,HSS,Cr17 and so on,and the real industrial parts have been tested too...
采用Ｎ＋＋Ｃｒ＋多元离子束增强沉积合成（ＴｉＣｒ）Ｎ膜层，对膜层进行了ＡＥＳ、ＴＥＭ和ＸＲＤ分析．测试了膜基体系的力学性能和电化学性能．与普通物理气相沉积相比，多元离子束增强沉积显示了开发新型薄膜材料的较强潜力． Multicomponent ion beam enhanced deposition was used to synthesize (TiCr)N films. The films were characterized by AES,TEM and XRD methods. The electrochemical property and mechanics property of the films were measured. The experimental results show that the multicomponent ion beam enhanced deposition has stronger potential of new material development than physical vapour deposition.
在ＧａＡｓ集成电路和器件研制中，离子注入是关键技术之一．介绍了用离子注入ＧａＡｓ形成ｎ型和ｐ型区，以及离子注入ｐ型和ｎ型ＧａＡｓ形成绝缘层、形成ｎ＋ＧａＡｓ深埋层等重要技术．对有关物理机制进行了讨论并提出了一些新见解；该离子注入新工艺已经应用于ＧａＡｓ器件和集成电路的研制，获得了多种新型器件． Optical and electrical properties of Si GaAs wafers implanted with Si+, S+, Be+, Mg+, B+, O+ have been investigated in this paper.
综述了近年来低能核物理所开展ＭｅＶ高能离子注入Ｓｉ的研究概况．研究工作包括深注入掩埋层物理特性分析，新型增强退火研究，二次缺陷的抑制与消除，离子束缺陷工程新原理、新方法的建立和应用，注入杂质的叠加分布与计算等． This paper presents a briefing of the development of implanted silicon with MeV high energy ion at the BNU of late years. A lot of subjects are reviewed.
综述了北京师范大学低能核物理所的ＢＦ－５电子直线加速器在辐射加工中的研究应用情况，着重介绍了在电子辐照硅功率器件，高分子聚合物的辐射改性以及辐射加工剂量学等方面的研究和开发进展． The main recent progress on radiation processing by electron beam electron irradiation modification on silicon power devices, radiation crosslinking of wires and cables by electron beam and dosimetry for radiation processing are described.
介绍了一台自行研制的微秒级脉冲辐解装置，及其对一些自由基的形成及衰减动力学研究． A microsecond pulse radiolysis system in Beijing Normal University is reported in this paper. Several formation and decay kinetics of radicals were studied.
根据大量的实验结果总结了微弧氧化过程中的一些规律.并对铝合金微弧氧化表面陶瓷氧化层形成的机理进行了探讨． With micro arc oxidation, a ceramic oxidizing layer with the fare thickness and the high density is formed on aluminum alloys. In the work, the formation mechanism of surface ceramics on aluminum alloys with micro arc oxidation are suggested, based on the experimental data.