Study on Implanted Silicon with MeV Ions
-
摘要: 综述了近年来低能核物理所开展MeV高能离子注入Si的研究概况.研究工作包括深注入掩埋层物理特性分析,新型增强退火研究,二次缺陷的抑制与消除,离子束缺陷工程新原理、新方法的建立和应用,注入杂质的叠加分布与计算等. This paper presents a briefing of the development of implanted silicon with MeV high energy ion at the BNU of late years. A lot of subjects are reviewed.Abstract: This paper presents a briefing of the development of implanted silicon with MeV high energy ion at the BNU of late years. A lot of subjects are reviewed.
-
Key words:
- high energy implantation /
- enhanced annealing /
- defect engineering
-
![WeChat](/fileYZHWLPL/journal/article/yzhwlpl/1997/3/PIC/wechat_cn_981.jpg)
计量
- 文章访问数: 1728
- HTML全文浏览量: 88
- PDF下载量: 444
- 被引次数: 0