Single Event Effect in Nano FinFET
doi: 10.11804/NuclPhysRev.31.04.516
- Received Date: 1900-01-01
- Rev Recd Date: 1900-01-01
- Publish Date: 2014-12-20
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Key words:
- FinFET /
- single event effect /
- simulation /
- harden technology
Abstract: FinFET presents more advantages than current bulk CMOS technologies, such as high speed, high density, lower power, more functionality and high scalability. A 3D single event effect model of nano-scale FinFET is simulated by using ISE TCAD. The considered physical models include mobility model, quantum effect model, recombination model and radiation effect model. The effects of the doping concentration, gate voltage, ion energy, parasitic capacitor, and technologies nodes on single event transient current in FinFET are analyzed. The possible mechanisms behind these effects are also presented. The results indicate some potential hardened technologies. It includes decreasing source doping concentration, increasing drain and substrate doping concentration, reducing ion energy,upgrading gate voltage (Vg) and optimizing parasitic capacitor.
Citation: | LIU Baojun, CAI Li, DONG Zhiguang, XU Guoqiang. Single Event Effect in Nano FinFET[J]. Nuclear Physics Review, 2014, 31(4): 516-521. doi: 10.11804/NuclPhysRev.31.04.516 |