Development of Superthin Epitaxial Silicon Detectors
doi: 10.11804/NuclPhysRev.12.03.055
- Received Date: 1900-01-01
- Rev Recd Date: 1900-01-01
- Publish Date: 1995-09-20
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Key words:
- epitaxial silicon /
- oxidize /
- energy resolution
Abstract: The epitaxial st-dE/dX surface barrier detectors with an active area of 28~154mm2 and thickness of 5. 2~10μm have been developed. This kind of detector can be used for measuring α-particle, proton with low energy and for distinguishing particles...
Citation: | Wang Zhu-sheng, Chao Zhi-yuan, Xu Jin-lan. Development of Superthin Epitaxial Silicon Detectors[J]. Nuclear Physics Review, 1995, 12(3): 55-57. doi: 10.11804/NuclPhysRev.12.03.055 |