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基于TCAD [16]构建14 nm 绝缘体上硅(Silicon-On-Insulator, SOI) FinFET器件的SET仿真模型 [6, 11]。采用高k栅介质(HfO2)和金属栅(TiN)结构,并对Si材料器件的电学性能进行试验校准[20],结果如图1所示。在此模型基础上,设置4H-SiC材料参数[11],如表1所列。器件其他参数[6, 11]为:栅长14 nm,fin高18 nm,fin宽10 nm,等效氧化层厚度0.5 nm,S/D长度35 nm,S/D扩展区长度33 nm,沟道均匀掺杂浓度5×1015 cm−3,源/漏高斯掺杂浓度1×1021 cm−3,源/漏扩展区高斯掺杂浓度8×1019 cm−3,衬底均匀掺杂浓度1×1015 cm−3。使用的物理模型包括:与掺杂浓度和高k栅介质相关的迁移率退化模型、飞利浦标准化迁移率模型、高电场饱和模型、能带隙和电子亲和性模型、BQP(Bohm Quantum Potential)模型、SRH(Shockley-Read-Hall)和Auger重组模型、费米统计模型及重离子辐射模型等 [6, 11]。
仿真参数 数值 仿真参数 数值 禁带宽度 3.2 eV 相对电介质常数 9.7 电子迁移率(300 K) 900 cm2/(V·s) 饱和电子迁移率 2×107 cm/s
Investigation of Temperature and Bias Voltage Dependence of Single Event Transient in 4H-SiC FinFET
doi: 10.11804/NuclPhysRev.40.2022107
- Received Date: 2022-10-17
- Rev Recd Date: 2022-12-19
- Publish Date: 2023-09-20
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Key words:
- single event transient /
- FinFET /
- temperature /
- bias voltage /
- 4H-SiC
Abstract: By TCAD, the model for single event transient(SET) in SOI 4H-SiC FinFET device at 14 nm technology node was simulated. With the temperature range from 258 to 398 K, the influence of the bias voltages on SET was analyzed and the potential mechanism was also discussed. The simulation results indicate that due to the temperature increase, the Femi energy of the device changes and the band gap reduces, which increases the driven current. Then it leads to improve the immunity to SET. However, because of the bias voltage increase, the inner electrical field in the device enhances, resulting in the rate of the charge collected increase, which increases the sensitivity to SET. Due to the competitive relationship between the impacts of the temperature and the bias voltage on SET, when the temperature is 398 K and the bias voltage is 0.4 V, the weakest SET is obtained. Compared with SET obtained at 300 K and 0.8 V, the weakest one is with the relative decrements of the current peak and the collected charge being 22.77%, 50.83%, respectively.
Citation: | Baojun LIU, Liang QIAN, Xiaokuo YANG, Ping ZHOU. Investigation of Temperature and Bias Voltage Dependence of Single Event Transient in 4H-SiC FinFET[J]. Nuclear Physics Review, 2023, 40(3): 454-458. doi: 10.11804/NuclPhysRev.40.2022107 |