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LI Pengjie, LI Zhihuan, CHEN Zhiqiang, WU Hongyi, TIAN Zhengyang, JIANG Wei, LI Jing, FENG Jun, ZANG Hongliang, LIU Qiang, NIU Chenyang, TAO Longchun, ZHANG Yun, SUN Xiaohui, WANG Xiang, LIU Yang, LI Qite, LOU Jianling, LI Xiangqing, HUA Hui, JIANG Dongxing, YE Yanlin, . Digital Pulse Shape Discrimination for Silicon Detector[J]. Nuclear Physics Review, 2017, 34(2): 177-183. DOI: 10.11804/NuclPhysRev.34.02.177
Citation: LI Pengjie, LI Zhihuan, CHEN Zhiqiang, WU Hongyi, TIAN Zhengyang, JIANG Wei, LI Jing, FENG Jun, ZANG Hongliang, LIU Qiang, NIU Chenyang, TAO Longchun, ZHANG Yun, SUN Xiaohui, WANG Xiang, LIU Yang, LI Qite, LOU Jianling, LI Xiangqing, HUA Hui, JIANG Dongxing, YE Yanlin, . Digital Pulse Shape Discrimination for Silicon Detector[J]. Nuclear Physics Review, 2017, 34(2): 177-183. DOI: 10.11804/NuclPhysRev.34.02.177
  • In this paper Pulse Shape Discrimination(PSD) for silicon detector has been briefly introduced. The emerging digital method successfully applied to detector signal processing makes digital PSD method one of the most promising particle identification methods. Sampling frequency and the number of bits are two key parameters of digital method. For silicon detector signal, adopting 100 Ms/s, 12 bit Digitizer can satisfy the time resolution requirement of PSD method. The identification characteristic and energy threshold of this method have been discussed and compared with both front injection and rear injection cases. Energy threshold with rear injection usually is much lower than that with front injection. For example, around for Neon isotope energy threshold with rear injection is about 100 MeV which is only half of the threshold with front injection, also equivalent to thickness of about 60 μm silicon detector threshold in ΔE-E method. At the end the impact of silicon detector's resistivity nonuniformity and channel effect on the identification capacity of PSD method has been discussed in detail.
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