Research on External Electron Injection Technology in ECRIS

The injection of the electron beam into the ECR (Electron Cyclotron Resonance)plasma by electron gun is a new method for the additional supplementary of the plasma electron, following the aluminum chamber wall and the bias plate, we are expecting for the higher current and charge state of the ion beam with it. However, because of the controllable parameter's variety, the lack of the accumulation of experience and data, and the shortage of convenience in designing and experimental practicing compared by biased disk and other means,it has always not been intensively studied. In this article, we take the 18 GHz ECR Ion Source using evaporative cooling technique as experimental platform, do the experiment of injecting electron into ECR plasma base on the simulation result of the electron beam's path in ECR's chamber by the 3D simulation software CST the particle studio. It shows that a pulsing leap of the current of the extracting ion beam appears when the injecting electron's energy is above 1 800 eV. In the mean time, the top of the pulse and the average current of the ion beam rises, the ionization state moves to a higher level. This phenomenon can be turned on and off by controlling the experimental condition. At the last part of the article, we discuss this improvement of the current and charge state of the ion beam despite of the position's missing between the injection of electron beam and the resonance surface, and hold the opinion that this phenomenon is positive to both pulsed and direct beam.