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GAO Xin, YANG Shengsheng, FENG Zhanzu, CAO Zhou, MA Yali. Radiation Damage Characterization of InGaAsP Laser Diodes for Space Laser Communication[J]. Nuclear Physics Review, 2015, 32(2): 249-253. DOI: 10.11804/NuclPhysRev.32.02.249
Citation: GAO Xin, YANG Shengsheng, FENG Zhanzu, CAO Zhou, MA Yali. Radiation Damage Characterization of InGaAsP Laser Diodes for Space Laser Communication[J]. Nuclear Physics Review, 2015, 32(2): 249-253. DOI: 10.11804/NuclPhysRev.32.02.249
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Radiation Damage Characterization of InGaAsP Laser Diodes for Space Laser Communication

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  • The 1.55 μm InGaAsP multi-quantum-well laser diodes with distributed feedback structures were irradiated by electrons and 60Co- rays. The experimental results show the slope efficiency of laser diode is mostly affected by the total ionizing dose produced by charging particles, and the threshold current and the optical power mainly by displacement damage dose. The displacement damage dose methodology was employed to evaluate radiation damage of the laser diodes, and to predict the power
    degradations of these diodes in space. The calculated results indicate that the optical powers of the diodes will have more serious degradation for medium Earth orbit than for geosynchronous Earth orbit,due to higher fluence density of high energy electrons in GEO orbits.
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