Thermal Evolution of Defects in Crystalline Silicon by Sequential Implantation of B and H Ions
doi: 10.11804/NuclPhysRev.30.04.471
- Received Date: 1900-01-01
- Rev Recd Date: 1900-01-01
- Publish Date: 2013-12-20
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Key words:
- crystalline Si /
- B and/or H ion implantation /
- H platelets /
- XTEM /
- SPAT
Abstract: Abstract:Cz n-type Si (100) wafers were singly or sequentially implanted at room temperature with 130 keV B ions at a fluence of 5x1014 cm-2 and 55 keV H ions at a fluence of 1x1016 cm-2. The implantation-induced defects were investigated in detail by using cross-sectional transmission electron microscopy (XTEM) and slow positron annihilation technique (SPAT). XTEM results clearly show that sequential implantation of B and H ions into Si could eliminate the (111) platelets and promote growth of (100) platelets during annealing. SPAT
measurements demonstrate that in B and H sequentially implanted and annealed Si, more vacancy-type defects could remain in sample region around the range of B ions. These results indicat e that the promotion effect should
be attributed to the role of both B and B implanted induced vacancy-type defects.
Citation: | ZHANG Bei, ZHANG Peng, WANG Jun, ZHU Fei, CAO Xingzhong, WANG Baoyi, LIU Changlong. Thermal Evolution of Defects in Crystalline Silicon by Sequential Implantation of B and H Ions[J]. Nuclear Physics Review, 2013, 30(4): 471-476. doi: 10.11804/NuclPhysRev.30.04.471 |