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LIU Jian-de, SUN You-mei, LIU Jie, HOU Ming-dong, ZHANG Zhan-gang, DUAN Jing-lai, YAO Hui-jun, ZHAI Peng-fei. Impact of Deltaelectrons on Singleevent Upsets with Geant4 Simulation[J]. Nuclear Physics Review, 2012, 29(4): 419-424. DOI: 10.11804/NuclPhysRev.29.04.419
Citation: LIU Jian-de, SUN You-mei, LIU Jie, HOU Ming-dong, ZHANG Zhan-gang, DUAN Jing-lai, YAO Hui-jun, ZHAI Peng-fei. Impact of Deltaelectrons on Singleevent Upsets with Geant4 Simulation[J]. Nuclear Physics Review, 2012, 29(4): 419-424. DOI: 10.11804/NuclPhysRev.29.04.419
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Impact of Deltaelectrons on Singleevent Upsets with Geant4 Simulation

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  • In this paper, the sensitive volume of SRAMs was constructed based on RPP(Rectangular ParallelePiped Volume) model using the Monte-Carlo code Geant4. The interactions of heavy ion with materials and the SEU(Single Event Upset) cross section calculation method were presented in the program. The SEU crosssection curves with the linear energy deposition ware obtained. The SEU threshold value and saturation cross section were consistent with the testing data with heavy ions beam. The δ electrons distribution were different in the device material, which were generated by Bi ion with LETs of 99.67 MeV/(cm2·mg) and Bi ion, Xe ion with LETs of 69 MeV/(cm-2·mg). These results indicate δ electrons distribution impacts on the SEU cross section. According to the relation of energy deposition in the sensitive volume, the δ electrons distribution have more and more important effect on the Single Event Effect with reducing the feature size of semiconductor devices.
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