Dielectronic Recombination of Xe8+ Ions
doi: 10.11804/NuclPhysRev.29.02.178
- Received Date: 1900-01-01
- Rev Recd Date: 1900-01-01
- Publish Date: 2012-06-20
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Key words:
- dielectronic recombination /
- rate coefficient /
- Xe8+ ion
Abstract: Based on the fully relativistic configuration interaction method, theoretical calculations are carried out for the dielectronic recombination (DR) rate coefficients of Xe8+ ions in the temperature region from 0.1 to 1 650 eV. The comparison of the DR rate coefficients from 4s, 4p and 4d subshell excitations shows that 4d subshell excitation dominates in the whole temperature region. The contribution from 4p subshell excitation is very important at temperature above 10 eV and the contributions from 4s subshell excitation is lower than 7.5% in the whole temperature region. Similarly, the comparison of the DR rate coefficients through △n=0, 1 and 2 core excitation shows that the contribution from △n=2 core excitation can not be neglected, the contributions from n′>15 can also not be neglected. The DR rate coefficients of △n=0, 1 and 2 core excitation and the total DR rate coefficients are fitted with some parameters, which are in good agreement with theoretical calculations values (within 1% difference). The total DR rate coefficients are greater than radiative recombination (RR) and threebody recombination (TBR) rate coefficients at temperature above 1 eV. Therefore, the DR process can strongly influence the ionization balance of laser produced xenon plasmas.
Citation: | ZHANG Guo-ding, FU Yan-biao, DONG Chen-zhong, ZHANG Yi-zhao. Dielectronic Recombination of Xe8+ Ions[J]. Nuclear Physics Review, 2012, 29(2): 178-183. doi: 10.11804/NuclPhysRev.29.02.178 |