Raman Spectroscopy Study of Krimplanted Silicon Carbide
doi: 10.11804/NuclPhysRev.28.02.209
- Received Date: 1900-01-01
- Rev Recd Date: 1900-01-01
- Publish Date: 2011-06-20
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Key words:
- 6H-SiC /
- ionimplantation /
- Raman spectrum /
- Relative Raman Intensity
Abstract: Raman spectroscopy was used to study the structure changes of 6HSiC single crystal implanted with 5 MeV Kr (Krypton) at room temperature and subsequently annealed at high temperature. The Raman spectrum of the implanted SiC displays not only Si—C bonds vibration peaks, but also homonuclear Si—Si and C—C bond vibration peaks. Si—C bond vibration peaks gradually strengthen with increasing temperature. When annealing at 1000 ℃, the peak intensity of Raman spectrum is close to that of virgin specimen. It is found that crystal Si—Si bond vibration peaks do not change when annealing, but amorphous Si—Si bond vibration peaks disappear with increasing annealing temperature. The Relative Raman Intensity (RRI) values decrease with increasing fluence and tend to saturate, but the saturation fluences is different for various anneal temperature. The RRI values increases with raising annealing temperature, which is more obvious in low implanted specimens. At the same time, the RRI values separate gradually with increasing temperature and this phenomenon is strengthened by annealing temperature.
Citation: | XU Chao-liang, ZHANG Chong-hong, LI Bing-sheng, ZHANG Li-qing, YANG Yi-tao, HAN Lu-hui, JIA Xiu-jun. Raman Spectroscopy Study of Krimplanted Silicon Carbide[J]. Nuclear Physics Review, 2011, 28(2): 209-214. doi: 10.11804/NuclPhysRev.28.02.209 |