Effects of 80 keV N-ion Implantation on Structures of ZnO Films
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Abstract
ZnO thin films were implanted at the room temperature by 80 keV N-ions to 5.0×1014, 5.0×1015 or 5.0×1016 ions/cm2, the structural characteristics of the samples were investigated using X-ray diffraction(XRD) spectrometer and transmission electron microscopy(TEM). It was found that the un-implanted ZnO films are constituted of columnar crystals which are very compact and of preferred c-axis orientation. After N-ion implantation, the crystal lattice constant and the biaxial compressive stress increased with the increasing of the N-implantation dose. In the 5.0×1016 N-ions/cm2 implanted ZnO sample, a new XRD peak due to defects or N-dopants appeared. Moreover, defects and localized disordering in the 5.0×1015 N-ions/cm2 implanted ZnO films have been observed under high resolution TEM measurement. However, N-ion implantation could not change significantly the crystal structure of the ZnO films. Possible mechanism of the structural modification of ZnO films by N-ion implantation was briefly discussed.
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