Research on Fabrication Technology of Micropore Array in Silicon Using Electrochemical Etching
doi: 10.11804/NuclPhysRev.25.03.277
- Received Date: 1900-01-01
- Rev Recd Date: 1900-01-01
- Publish Date: 2008-09-20
-
Key words:
- anisotropic etching /
- micropore array /
- electrochemical etching
Abstract: The 3D structures in silicon are increasingly coming to use in many fields. For example, the high resolution Xray digital imaging detector can be made by coupling CCD and the scintillating screen which is made by the array trenches filled with CsI(Tl). In the present work, we explored the technology of etching microarray on the ntype silicon with high resistance. By studying the relative parameters of anisotropic etching of KOH and electrochemical etching of HF, the optimized concentration of HF was determined and the micropore array trenches with 200 μm in depth were realized. The results establish an experimental base for further fabrication of the scintillating screen.
Citation: | XUE Zhi-hao, SUN You-mei, #, CHANG Hai-long, LIU Jie, HOU Ming-dong, YAO Hui-jun, MO Dan, CHEN Yan-feng. Research on Fabrication Technology of Micropore Array in Silicon Using Electrochemical Etching[J]. Nuclear Physics Review, 2008, 25(3): 277-281. doi: 10.11804/NuclPhysRev.25.03.277 |