Defect Production in Silicon Carbide by Inert-gas-ion Irradiation
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Abstract
This paper gives a review of our recent studies on the defect production in silicon carbide induced by energetic inert-gas-ion irradiation. The work includes the study of the dose threshold for helium bubble formation by combining TEM, RBS-channeling and PAS, the theoretical analysis of the dose threshold for bubble formation based on the Frozen-Matrix assumption, two types of bubble arrangement at different dose regions and the study of damage um-ion production behavior in the case of irradiation with heavier inert-gas-ions （ Ne, Xe） as a comparison to heliirradiation.
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