Application of HTS in Pulsed Ion Beam of Sccelerator and Study on Secondary Ion Emission of Hydrogen from Carbon Nanotubes  under Bombardments of MeV Si and Si<SUB>2</SUB> Clusters

DING Fu-rong; SHI Ping; WANG Yao; NIE Rui; SHEN Ding-yu; MA Hong-ji

doi:10.11804/NuclPhysRev.21.01.034

DING Fu-rong, SHI Ping, WANG Yao, NIE Rui, SHEN Ding-yu, MA Hong-ji. Application of HTS in Pulsed Ion Beam of Sccelerator and Study on Secondary Ion Emission of Hydrogen from Carbon Nanotubes under Bombardments of MeV Si and Si2 Clusters[J]. Nuclear Physics Review, 2004, 21(1): 34-37. DOI: 10.11804/NuclPhysRev.21.01.034

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Application of HTS in Pulsed Ion Beam of Sccelerator and Study on Secondary Ion Emission of Hydrogen from Carbon Nanotubes under Bombardments of MeV Si and Si₂ Clusters

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The application of Fast High Voltage Transistor Switches (HTS) in pulsed ion beam and the time of flight(TOF ) setup is described. Secondary ion emissions from carbon nanotubes under bombardments of MeV Si and Si2 clusters are measured by using TOF. The measurements indicate that the yield of the secondary ion emissions of hydrogen increases with increasing energy of Si and it is attributed to the electronic processes. The yield of the secondary ions of hydrogen decreases with increasing energy of Si2 clusters and the enhancement of nuclear energy loss of cluster constituents at the surface of sample plays a more significant role in the secondary ion emission of hydrogen at the low energies.

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Application of HTS in Pulsed Ion Beam of Sccelerator and Study on Secondary Ion Emission of Hydrogen from Carbon Nanotubes under Bombardments of MeV Si and Si2 Clusters

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Application of HTS in Pulsed Ion Beam of Sccelerator and Study on Secondary Ion Emission of Hydrogen from Carbon Nanotubes under Bombardments of MeV Si and Si₂ Clusters