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MA Li, WEI Shu-yi, WANG Jian-guang. Electronic Structure of Sulfur Passivation GaAs(100) Surface[J]. Nuclear Physics Review, 2002, 19(Suppl): 102-105. DOI: 10.11804/NuclPhysRev.19.S1.102
Citation: MA Li, WEI Shu-yi, WANG Jian-guang. Electronic Structure of Sulfur Passivation GaAs(100) Surface[J]. Nuclear Physics Review, 2002, 19(Suppl): 102-105. DOI: 10.11804/NuclPhysRev.19.S1.102
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Electronic Structure of Sulfur Passivation GaAs(100) Surface

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  • The adsorption of one monolayer S atoms on an ideal GaAs(10 0) surface is studied by using the self-consistent tight-binding linear muffin- tin orbital method. The S atoms chemisorption on Ga-terminated and As-terminat ed surface are considered respectively. Adsorption energies of a S atom on diffe rent sites are calculated. The layer projected density of states for S atoms cov ered GaAs(100) surface is studied and compared with that of the clean surface. T he charge transfer is investigated. It is...
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