Approaches to Study Single Event Effects Induced by High Energy Protons in Devices

LIU Jie; HOU Ming-dong; ZHANG Qin-xiang; ZENG Hong-lou; SUN You-mei; LIU Chang-long; WANG Zhi-guang; ZHU Zhi-yong; JIN Yun-fan

doi:10.11804/NuclPhysRev.19.04.411

LIU Jie, HOU Ming-dong, ZHANG Qin-xiang, ZENG Hong-lou, SUN You-mei, LIU Chang-long, WANG Zhi-guang, ZHU Zhi-yong, JIN Yun-fan. Approaches to Study Single Event Effects Induced by High Energy Protons in Devices[J]. Nuclear Physics Review, 2002, 19(4): 411-415. DOI: 10.11804/NuclPhysRev.19.04.411

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Approaches to Study Single Event Effects Induced by High Energy Protons in Devices

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This article introduces briefly the experimental and theoretical methods that have been used to study highenergy protoninduced single event effect in semiconductor devices. The theoretical methods including nuclear reaction analysis method and semiempirical method are presented. The relationship of upset cross section between proton and heavy ions is described. Finally, onorbit proton upset rates are predicted by using the heavyion test data. 

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Approaches to Study Single Event Effects Induced by High Energy Protons in Devices

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