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屈祥如, 周威, 牛晓阳, 赵承心. 基于国产工艺的高速并串转换电路设计[J]. 原子核物理评论, 2022, 39(3): 343-351. DOI: 10.11804/NuclPhysRev.39.2021078
引用本文: 屈祥如, 周威, 牛晓阳, 赵承心. 基于国产工艺的高速并串转换电路设计[J]. 原子核物理评论, 2022, 39(3): 343-351. DOI: 10.11804/NuclPhysRev.39.2021078
Xiangru QU, Wei ZHOU, Xiaoyang NIU, Chengxin ZHAO. Design of a High-speed Serializer with a Domestic CMOS Process[J]. Nuclear Physics Review, 2022, 39(3): 343-351. DOI: 10.11804/NuclPhysRev.39.2021078
Citation: Xiangru QU, Wei ZHOU, Xiaoyang NIU, Chengxin ZHAO. Design of a High-speed Serializer with a Domestic CMOS Process[J]. Nuclear Physics Review, 2022, 39(3): 343-351. DOI: 10.11804/NuclPhysRev.39.2021078

基于国产工艺的高速并串转换电路设计

Design of a High-speed Serializer with a Domestic CMOS Process

  • 摘要: 面向全国产化工艺的5 Gbps SerDes(Serializer/DESerializer,串化器/解串器)芯片的需求,设计了其中的20:1 Serializer(并串转换电路)。该并串转换电路基于国产GSMC 130 nm CMOS工艺设计,其内部电路结构设计采用了一级5:1模块和两级2:1模块级联方式,并由多相时钟发生器和分频器提供相应的时钟信号,将20路250 Mbps并行数据转换成1路5 Gbps的高速串行数据进行传输。在温度−40~100 °C、全工艺角环境、电路工作电压在1.08~1.32 V 的条件下,后仿真结果均显示该电路功能正确,能输出完整清晰的5 Gbps数据眼图, 满足设计需求。 其中在27 °C、TT Corner(典型值工艺角)、1.2 V工作电压条件下仿真结果表明该并串转换电路整体总功耗为39.12 mW、总抖动为8.34 ps、输出电压满摆幅为800 mV。

     

    Abstract: This paper designs a 20:1 Serializer for a 5 Gbps SerDes (Serializer/DESerializer) ASIC fabricated using China's domestic GSMC 130 nm CMOS process. This Serializer converts the 20-bit 250 Mbps parallel data into 1-bit 5Gbps serial data. It consists of one stage of 5:1 conversion module and two stages of 2:1 conversion module. The clocks are provided by a multi-phase clock generator and a frequency divider. Post-simulations with all process corners, the temperature is from −40 °C to 100 °C and supply voltage is from 1.08 to 1.32 Volt, show this Serializer functions correctly and can generate a clear eye diagram at 5 Gbps, which fulfills the design requirements. Mainly, simulation with the typical process corner, the temperature at 27 °C, and supply voltage at 1.2 Volt show that the total power dissipation is 39.12 mW, the total jitter is 8.34 ps, and the output voltage rail-to-rail is 800 mV.

     

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