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硫化温度对ZnS薄膜生长质量的影响

宋力刚 朱特 曹兴忠 张仁刚 况鹏 靳硕学 张鹏 龚毅豪 王宝义

宋力刚, 朱特, 曹兴忠, 张仁刚, 况鹏, 靳硕学, 张鹏, 龚毅豪, 王宝义. 硫化温度对ZnS薄膜生长质量的影响[J]. 原子核物理评论, 2017, 34(3): 651-655. doi: 10.11804/NuclPhysRev.34.03.651
引用本文: 宋力刚, 朱特, 曹兴忠, 张仁刚, 况鹏, 靳硕学, 张鹏, 龚毅豪, 王宝义. 硫化温度对ZnS薄膜生长质量的影响[J]. 原子核物理评论, 2017, 34(3): 651-655. doi: 10.11804/NuclPhysRev.34.03.651
SONG Ligang, ZHU Te, CAO Xingzhong, ZHANG Rengang, KUANG Peng, JIN Shuoxue, ZHANG Peng, GONG Yihao, WANG Baoyi. Effect of Sulfurization Temperature on the Growth Quality of ZnS Thin Film[J]. Nuclear Physics Review, 2017, 34(3): 651-655. doi: 10.11804/NuclPhysRev.34.03.651
Citation: SONG Ligang, ZHU Te, CAO Xingzhong, ZHANG Rengang, KUANG Peng, JIN Shuoxue, ZHANG Peng, GONG Yihao, WANG Baoyi. Effect of Sulfurization Temperature on the Growth Quality of ZnS Thin Film[J]. Nuclear Physics Review, 2017, 34(3): 651-655. doi: 10.11804/NuclPhysRev.34.03.651

硫化温度对ZnS薄膜生长质量的影响

doi: 10.11804/NuclPhysRev.34.03.651
基金项目: 国家自然科学基金资助项目(11505205,11505192);湖北省教育厅科研计划项目(D20121109)
详细信息
    作者简介:

    宋力刚(1992-),男,湖北武穴人,硕士研究生,从事物理学研究;E-mail:songlg@ihep.ac.cn

    通讯作者: 曹兴忠,E-mail:caoxzh@ihep.ac.cn;张仁刚,E-mai:whzrg@126.com
  • 中图分类号: O782+.7

Effect of Sulfurization Temperature on the Growth Quality of ZnS Thin Film

Funds: National Natural Science Foundation of China (11505205, 11505192); Educational Department of Hubei Province(D20121109)
More Information
    Corresponding author: 10.11804/NuclPhysRev.34.03.651
  • 摘要: 采用热反应法对玻璃衬底上以磁控溅射制备的Zn薄膜进行硫化,制备出ZnS薄膜。薄膜的微观结构、物相结构和表面形貌分别采用正电子湮没技术(PAT)、X射线衍射仪(XRD)、扫描电子显微镜(SEM)进行分析和表征。利用慢正电子湮没多普勒展宽对四个不同硫化温度下得到的ZnS薄膜样品中膜层结构缺陷进行研究,测量了薄膜中的空位型微观缺陷的相对浓度,指出445℃硫化样品中正电子注入能量在1.5~4.5 keV后S参数最小,说明该硫化温度下反应生成的ZnS薄膜结构缺陷浓度最小,膜的致密度最高。XRD结果显示薄膜在445℃以上硫化后,呈(111)择优生长趋势。从扫描电镜的结果也可以看出,在445℃硫化后,薄膜的晶粒明显地变得更大、更致密,这是因为ZnS晶胞比Zn晶胞大以及硫化过程中ZnS固相再结晶的缘故。


    ZnS thin films have been prepared by sulfurizing zinc thin films deposited on glass substrate by magnetron sputtering for two hours. The microstructure defects, crystallizations and surface morphology of zinc films sulfurized at different temperature were analyzed by PAT (positron annihilation technique), XRD(X-ray diffraction) and SEM (Scanning electron microscopy), respectively. For analyzing the structure defect of four samples with different sulfurization temperature, PAT has been used to obtain the relative concentration of defects. With the positron energy range of 1.5~4.5 keV, the S parameter of ZnS films is minimum. It demonstrates that ZnS films produced at 445℃ have the minimum structural defect concentration and the highest density. XRD results show that films are blende structure with the preference of (111) orientation above 445℃. And from the result of SEM, because of ZnS films recrystallization, the crystal grains obviously become large and dense at 445℃.
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出版历程
  • 收稿日期:  2016-12-06
  • 修回日期:  2017-04-10
  • 刊出日期:  2017-07-18

硫化温度对ZnS薄膜生长质量的影响

doi: 10.11804/NuclPhysRev.34.03.651
    基金项目:  国家自然科学基金资助项目(11505205,11505192);湖北省教育厅科研计划项目(D20121109)
    作者简介:

    宋力刚(1992-),男,湖北武穴人,硕士研究生,从事物理学研究;E-mail:songlg@ihep.ac.cn

    通讯作者: 曹兴忠,E-mail:caoxzh@ihep.ac.cn;张仁刚,E-mai:whzrg@126.com
  • 中图分类号: O782+.7

摘要: 采用热反应法对玻璃衬底上以磁控溅射制备的Zn薄膜进行硫化,制备出ZnS薄膜。薄膜的微观结构、物相结构和表面形貌分别采用正电子湮没技术(PAT)、X射线衍射仪(XRD)、扫描电子显微镜(SEM)进行分析和表征。利用慢正电子湮没多普勒展宽对四个不同硫化温度下得到的ZnS薄膜样品中膜层结构缺陷进行研究,测量了薄膜中的空位型微观缺陷的相对浓度,指出445℃硫化样品中正电子注入能量在1.5~4.5 keV后S参数最小,说明该硫化温度下反应生成的ZnS薄膜结构缺陷浓度最小,膜的致密度最高。XRD结果显示薄膜在445℃以上硫化后,呈(111)择优生长趋势。从扫描电镜的结果也可以看出,在445℃硫化后,薄膜的晶粒明显地变得更大、更致密,这是因为ZnS晶胞比Zn晶胞大以及硫化过程中ZnS固相再结晶的缘故。


ZnS thin films have been prepared by sulfurizing zinc thin films deposited on glass substrate by magnetron sputtering for two hours. The microstructure defects, crystallizations and surface morphology of zinc films sulfurized at different temperature were analyzed by PAT (positron annihilation technique), XRD(X-ray diffraction) and SEM (Scanning electron microscopy), respectively. For analyzing the structure defect of four samples with different sulfurization temperature, PAT has been used to obtain the relative concentration of defects. With the positron energy range of 1.5~4.5 keV, the S parameter of ZnS films is minimum. It demonstrates that ZnS films produced at 445℃ have the minimum structural defect concentration and the highest density. XRD results show that films are blende structure with the preference of (111) orientation above 445℃. And from the result of SEM, because of ZnS films recrystallization, the crystal grains obviously become large and dense at 445℃.

English Abstract

宋力刚, 朱特, 曹兴忠, 张仁刚, 况鹏, 靳硕学, 张鹏, 龚毅豪, 王宝义. 硫化温度对ZnS薄膜生长质量的影响[J]. 原子核物理评论, 2017, 34(3): 651-655. doi: 10.11804/NuclPhysRev.34.03.651
引用本文: 宋力刚, 朱特, 曹兴忠, 张仁刚, 况鹏, 靳硕学, 张鹏, 龚毅豪, 王宝义. 硫化温度对ZnS薄膜生长质量的影响[J]. 原子核物理评论, 2017, 34(3): 651-655. doi: 10.11804/NuclPhysRev.34.03.651
SONG Ligang, ZHU Te, CAO Xingzhong, ZHANG Rengang, KUANG Peng, JIN Shuoxue, ZHANG Peng, GONG Yihao, WANG Baoyi. Effect of Sulfurization Temperature on the Growth Quality of ZnS Thin Film[J]. Nuclear Physics Review, 2017, 34(3): 651-655. doi: 10.11804/NuclPhysRev.34.03.651
Citation: SONG Ligang, ZHU Te, CAO Xingzhong, ZHANG Rengang, KUANG Peng, JIN Shuoxue, ZHANG Peng, GONG Yihao, WANG Baoyi. Effect of Sulfurization Temperature on the Growth Quality of ZnS Thin Film[J]. Nuclear Physics Review, 2017, 34(3): 651-655. doi: 10.11804/NuclPhysRev.34.03.651
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