摘要: 采用热反应法对玻璃衬底上以磁控溅射制备的Zn薄膜进行硫化，制备出ZnS薄膜。薄膜的微观结构、物相结构和表面形貌分别采用正电子湮没技术（PAT）、X射线衍射仪（XRD）、扫描电子显微镜（SEM）进行分析和表征。利用慢正电子湮没多普勒展宽对四个不同硫化温度下得到的ZnS薄膜样品中膜层结构缺陷进行研究，测量了薄膜中的空位型微观缺陷的相对浓度，指出445℃硫化样品中正电子注入能量在1.5~4.5 keV后S参数最小，说明该硫化温度下反应生成的ZnS薄膜结构缺陷浓度最小，膜的致密度最高。XRD结果显示薄膜在445℃以上硫化后，呈（111）择优生长趋势。从扫描电镜的结果也可以看出，在445℃硫化后，薄膜的晶粒明显地变得更大、更致密，这是因为ZnS晶胞比Zn晶胞大以及硫化过程中ZnS固相再结晶的缘故。


ZnS thin films have been prepared by sulfurizing zinc thin films deposited on glass substrate by magnetron sputtering for two hours. The microstructure defects, crystallizations and surface morphology of zinc films sulfurized at different temperature were analyzed by PAT (positron annihilation technique), XRD(X-ray diffraction) and SEM (Scanning electron microscopy), respectively. For analyzing the structure defect of four samples with different sulfurization temperature, PAT has been used to obtain the relative concentration of defects. With the positron energy range of 1.5~4.5 keV, the S parameter of ZnS films is minimum. It demonstrates that ZnS films produced at 445℃ have the minimum structural defect concentration and the highest density. XRD results show that films are blende structure with the preference of (111) orientation above 445℃. And from the result of SEM, because of ZnS films recrystallization, the crystal grains obviously become large and dense at 445℃.