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129Xeq+轰击N型和P型Si表面时的电子发射产额研究

曾利霞 徐忠锋 赵永涛 吴帆 刘学良 程锐 周贤明 雷瑜 刘世东 张艳宁

曾利霞, 徐忠锋, 赵永涛, 吴帆, 刘学良, 程锐, 周贤明, 雷瑜, 刘世东, 张艳宁. 129Xeq+轰击N型和P型Si表面时的电子发射产额研究[J]. 原子核物理评论, 2016, 33(3): 365-369. doi: 10.11804/NuclPhysRev.33.03.365
引用本文: 曾利霞, 徐忠锋, 赵永涛, 吴帆, 刘学良, 程锐, 周贤明, 雷瑜, 刘世东, 张艳宁. 129Xeq+轰击N型和P型Si表面时的电子发射产额研究[J]. 原子核物理评论, 2016, 33(3): 365-369. doi: 10.11804/NuclPhysRev.33.03.365
ZENG Lixia, XU Zhongfeng, ZHAO Yongtao, WU Fan, LIU Xueliang, CHENG Rui, ZHOU Xianming, LEI Yu, LIU Shidong, ZHANG Yanning. Secondary Electron Emission from N-type and P-type Si Induced by 129Xeq+[J]. Nuclear Physics Review, 2016, 33(3): 365-369. doi: 10.11804/NuclPhysRev.33.03.365
Citation: ZENG Lixia, XU Zhongfeng, ZHAO Yongtao, WU Fan, LIU Xueliang, CHENG Rui, ZHOU Xianming, LEI Yu, LIU Shidong, ZHANG Yanning. Secondary Electron Emission from N-type and P-type Si Induced by 129Xeq+[J]. Nuclear Physics Review, 2016, 33(3): 365-369. doi: 10.11804/NuclPhysRev.33.03.365

129Xeq+轰击N型和P型Si表面时的电子发射产额研究

doi: 10.11804/NuclPhysRev.33.03.365
基金项目: 国家自然科学基金资助项目(11605147,11075125,11375138,11505248);高等学校博士学科点专项科研基金(2013020111-0066);陕西省教育厅科研计划资助项目(16JK1824);咸阳师范学院专项科研项目(12XSYK018);咸阳师范学院教学改革研究项目(201402011)
详细信息
    作者简介:

    曾利霞(1982-),女,山西大同人,讲师,硕士,从事原子与分子物理研究;E-mail:zenglixia1982@126.com

    通讯作者: 徐忠锋,E-mail:zhfxu@mail.xjtu.edu.cn
  • 中图分类号: O562.4

Secondary Electron Emission from N-type and P-type Si Induced by 129Xeq+

Funds: National Natural Science Foundation of China (11605147,11075125, 11375138, 11505248); Specialized Research Fund for the Doctoral Program of Higher Education (20130201110066); Scientific Research Program Funded by Shaanxi Provincial Education Department(16JK1824); Scientific Research Foundation of Xianyang Normal University(12XSYK018); Teaching Reform Research Program of Xianyang Normal University(201402011)
  • 摘要: 在兰州重离子加速器国家实验室测量了1.8 MeV Xeq+离子分别轰击N型和P型Si两种靶材表面时的电子发射产额。实验中,通过改变入射离子的电荷态,研究了入射离子势能沉积对两种靶材表面电子发射产额的贡献。结果发现同一离子入射时,N型Si表面的电子发射产额高出P型Si表面的电子发射产额约12.5%;对于具有相同入射动能的Xeq+离子,两种靶材表面的电子发射产额均随着入射离子势能的增加而线性增加。此外,还测量了3.4 MeV Xeq+离子分别轰击以上两种靶材时的电子发射产额,得到了类似的结果。本文利用功函数分别从动能电子发射和势能电子发射两个角度对实验结果进行了分析讨论。

    The electron emissions from N-type Si and P-type Si induced by 1.8 MeV 129Xeq+are measured in the National Laboratory of Heavy Ion Research Facility in Lanzhou,The contribution to electron emission yield from potential energy of incident ions is studied through changing the charge state of incident ions.The results show that for the same incident ion,electron emission yield of N type Si surface is higher than that of P-type Si surface about 12.5%.For incident ions with the same kinetic energy,both electron emission yields of two targets increase linearly with incident ion energy.In addition,the electron emissions induced by 3.4 MeV 129Xeq+from N-type Si and P-type Si mentioned above are measured,which give similar results.The experimental results are analyzed and discussed using work function from two angles of the kinetic electron emission and the potential energy electron emission.
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出版历程
  • 收稿日期:  2016-05-29
  • 修回日期:  2016-08-03
  • 刊出日期:  2016-09-20

129Xeq+轰击N型和P型Si表面时的电子发射产额研究

doi: 10.11804/NuclPhysRev.33.03.365
    基金项目:  国家自然科学基金资助项目(11605147,11075125,11375138,11505248);高等学校博士学科点专项科研基金(2013020111-0066);陕西省教育厅科研计划资助项目(16JK1824);咸阳师范学院专项科研项目(12XSYK018);咸阳师范学院教学改革研究项目(201402011)
    作者简介:

    曾利霞(1982-),女,山西大同人,讲师,硕士,从事原子与分子物理研究;E-mail:zenglixia1982@126.com

    通讯作者: 徐忠锋,E-mail:zhfxu@mail.xjtu.edu.cn
  • 中图分类号: O562.4

摘要: 在兰州重离子加速器国家实验室测量了1.8 MeV Xeq+离子分别轰击N型和P型Si两种靶材表面时的电子发射产额。实验中,通过改变入射离子的电荷态,研究了入射离子势能沉积对两种靶材表面电子发射产额的贡献。结果发现同一离子入射时,N型Si表面的电子发射产额高出P型Si表面的电子发射产额约12.5%;对于具有相同入射动能的Xeq+离子,两种靶材表面的电子发射产额均随着入射离子势能的增加而线性增加。此外,还测量了3.4 MeV Xeq+离子分别轰击以上两种靶材时的电子发射产额,得到了类似的结果。本文利用功函数分别从动能电子发射和势能电子发射两个角度对实验结果进行了分析讨论。

The electron emissions from N-type Si and P-type Si induced by 1.8 MeV 129Xeq+are measured in the National Laboratory of Heavy Ion Research Facility in Lanzhou,The contribution to electron emission yield from potential energy of incident ions is studied through changing the charge state of incident ions.The results show that for the same incident ion,electron emission yield of N type Si surface is higher than that of P-type Si surface about 12.5%.For incident ions with the same kinetic energy,both electron emission yields of two targets increase linearly with incident ion energy.In addition,the electron emissions induced by 3.4 MeV 129Xeq+from N-type Si and P-type Si mentioned above are measured,which give similar results.The experimental results are analyzed and discussed using work function from two angles of the kinetic electron emission and the potential energy electron emission.

English Abstract

曾利霞, 徐忠锋, 赵永涛, 吴帆, 刘学良, 程锐, 周贤明, 雷瑜, 刘世东, 张艳宁. 129Xeq+轰击N型和P型Si表面时的电子发射产额研究[J]. 原子核物理评论, 2016, 33(3): 365-369. doi: 10.11804/NuclPhysRev.33.03.365
引用本文: 曾利霞, 徐忠锋, 赵永涛, 吴帆, 刘学良, 程锐, 周贤明, 雷瑜, 刘世东, 张艳宁. 129Xeq+轰击N型和P型Si表面时的电子发射产额研究[J]. 原子核物理评论, 2016, 33(3): 365-369. doi: 10.11804/NuclPhysRev.33.03.365
ZENG Lixia, XU Zhongfeng, ZHAO Yongtao, WU Fan, LIU Xueliang, CHENG Rui, ZHOU Xianming, LEI Yu, LIU Shidong, ZHANG Yanning. Secondary Electron Emission from N-type and P-type Si Induced by 129Xeq+[J]. Nuclear Physics Review, 2016, 33(3): 365-369. doi: 10.11804/NuclPhysRev.33.03.365
Citation: ZENG Lixia, XU Zhongfeng, ZHAO Yongtao, WU Fan, LIU Xueliang, CHENG Rui, ZHOU Xianming, LEI Yu, LIU Shidong, ZHANG Yanning. Secondary Electron Emission from N-type and P-type Si Induced by 129Xeq+[J]. Nuclear Physics Review, 2016, 33(3): 365-369. doi: 10.11804/NuclPhysRev.33.03.365
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