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FPGA配置片反熔丝PROMs加速器地面单粒子效应特性研究

耿超 李孝远 林熠 罗春华 谢文刚 邓玉良 李达

耿超, 李孝远, 林熠, 罗春华, 谢文刚, 邓玉良, 李达. FPGA配置片反熔丝PROMs加速器地面单粒子效应特性研究[J]. 原子核物理评论, 2016, 33(3): 358-364. doi: 10.11804/NuclPhysRev.33.03.358
引用本文: 耿超, 李孝远, 林熠, 罗春华, 谢文刚, 邓玉良, 李达. FPGA配置片反熔丝PROMs加速器地面单粒子效应特性研究[J]. 原子核物理评论, 2016, 33(3): 358-364. doi: 10.11804/NuclPhysRev.33.03.358
GENG Chao, LI Xiaoyuan, LIN Yi, LUO Chunhua, XIE Wengang, DENG Yuliang, LI Da. Investigation Single Event Effects Characterization on Configuration PROMs of FPGA Induced by Heavy Ions[J]. Nuclear Physics Review, 2016, 33(3): 358-364. doi: 10.11804/NuclPhysRev.33.03.358
Citation: GENG Chao, LI Xiaoyuan, LIN Yi, LUO Chunhua, XIE Wengang, DENG Yuliang, LI Da. Investigation Single Event Effects Characterization on Configuration PROMs of FPGA Induced by Heavy Ions[J]. Nuclear Physics Review, 2016, 33(3): 358-364. doi: 10.11804/NuclPhysRev.33.03.358

FPGA配置片反熔丝PROMs加速器地面单粒子效应特性研究

doi: 10.11804/NuclPhysRev.33.03.358
详细信息
    作者简介:

    耿超(1987-),男,安徽马鞍山人,抗辐射电子工程师,博士,从事集成电路与半导体器件辐射效应和可靠性加固设计研究;E-mail:gengchao13@163.com

  • 中图分类号: TN386.1

Investigation Single Event Effects Characterization on Configuration PROMs of FPGA Induced by Heavy Ions

  • 摘要: 针对0.13 μm CMOS(Complementary Metal-Oxide-Semiconductor)体硅外延工艺下FPGA(Field Programmable Gate Arrays)配置片反熔丝PROM(Programmable-Read-Only-Memory)进行了单粒子效应(Single Event Effects SEEs)的加速器地面模拟试验研究。以PROM的存储容量、数据类型和工艺差异性为研究变量,考核与验证其在不同种类和能量粒子入射的系列性加速器地面SEEs模拟试验。研究结果表明,相对于8 Mbits PROM而言,空片16 Mbits PROM抗辐射性能最优,且从翻转饱和截面上说,16 Mbits的PROM具备更高的可靠性,优于国外同系列的芯片类型,试验用PROM芯片的单粒子锁定阈值>99.0 MeV·cm2/mg。另一方面,研究0.13 μm CMOS普通与深阱工艺技术下PROM芯片单粒子翻转效应异同性的实验数据表明,在高LET(Linear Energy Transfer)处的两者抗辐射性能并无明显变化,但是低LET处(LET翻转阈值)的加固效果较为明显,即抗辐射技术能力主要体现在LET翻转阈值的提升而非翻转截面的减小。

    Single event effects (SEEs) have been characterized and investigated on one-time configured devices for field-programmable-gate-arrays (FPGA) of programmable-read-only-memory (PROM) in 0.13 μm Complementary Metal-Oxide-Semiconductor (CMOS) technology.The variables of their memory size,written data and technology have been taken into consideration as the key parameters affecting the SEEs sensitivity when testing and verifying the reliability/radiation tolerance on self-made PROMs by heavy ions.The results show that,16 Mbits PROM within blanked data has been studied that it has better performance to radiation tolerance as compared with the 8 Mbits PROMs.Additionally,16 Mbits PROMs have the higher reliability,if based on the viewpoint of the saturated single event upset cross-section.To the single event latchup,16 Mbits PROMs were exposed to a total fluence of 107 ions/cm2 at the linear energy transfer (LET) of 99.0 MeV·cm2/mg and no obvious fluctuation of current has been observed.Additionally,as comparing the zone of high LET value,0.13 μm CMOS transistors with deep-well technology present a better radiation hardened approach than normal technology,especially in improving the threshold of LET at the zone of low LET value.
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出版历程
  • 收稿日期:  2015-06-24
  • 修回日期:  2015-09-21
  • 刊出日期:  2016-09-20

FPGA配置片反熔丝PROMs加速器地面单粒子效应特性研究

doi: 10.11804/NuclPhysRev.33.03.358
    作者简介:

    耿超(1987-),男,安徽马鞍山人,抗辐射电子工程师,博士,从事集成电路与半导体器件辐射效应和可靠性加固设计研究;E-mail:gengchao13@163.com

  • 中图分类号: TN386.1

摘要: 针对0.13 μm CMOS(Complementary Metal-Oxide-Semiconductor)体硅外延工艺下FPGA(Field Programmable Gate Arrays)配置片反熔丝PROM(Programmable-Read-Only-Memory)进行了单粒子效应(Single Event Effects SEEs)的加速器地面模拟试验研究。以PROM的存储容量、数据类型和工艺差异性为研究变量,考核与验证其在不同种类和能量粒子入射的系列性加速器地面SEEs模拟试验。研究结果表明,相对于8 Mbits PROM而言,空片16 Mbits PROM抗辐射性能最优,且从翻转饱和截面上说,16 Mbits的PROM具备更高的可靠性,优于国外同系列的芯片类型,试验用PROM芯片的单粒子锁定阈值>99.0 MeV·cm2/mg。另一方面,研究0.13 μm CMOS普通与深阱工艺技术下PROM芯片单粒子翻转效应异同性的实验数据表明,在高LET(Linear Energy Transfer)处的两者抗辐射性能并无明显变化,但是低LET处(LET翻转阈值)的加固效果较为明显,即抗辐射技术能力主要体现在LET翻转阈值的提升而非翻转截面的减小。

Single event effects (SEEs) have been characterized and investigated on one-time configured devices for field-programmable-gate-arrays (FPGA) of programmable-read-only-memory (PROM) in 0.13 μm Complementary Metal-Oxide-Semiconductor (CMOS) technology.The variables of their memory size,written data and technology have been taken into consideration as the key parameters affecting the SEEs sensitivity when testing and verifying the reliability/radiation tolerance on self-made PROMs by heavy ions.The results show that,16 Mbits PROM within blanked data has been studied that it has better performance to radiation tolerance as compared with the 8 Mbits PROMs.Additionally,16 Mbits PROMs have the higher reliability,if based on the viewpoint of the saturated single event upset cross-section.To the single event latchup,16 Mbits PROMs were exposed to a total fluence of 107 ions/cm2 at the linear energy transfer (LET) of 99.0 MeV·cm2/mg and no obvious fluctuation of current has been observed.Additionally,as comparing the zone of high LET value,0.13 μm CMOS transistors with deep-well technology present a better radiation hardened approach than normal technology,especially in improving the threshold of LET at the zone of low LET value.

English Abstract

耿超, 李孝远, 林熠, 罗春华, 谢文刚, 邓玉良, 李达. FPGA配置片反熔丝PROMs加速器地面单粒子效应特性研究[J]. 原子核物理评论, 2016, 33(3): 358-364. doi: 10.11804/NuclPhysRev.33.03.358
引用本文: 耿超, 李孝远, 林熠, 罗春华, 谢文刚, 邓玉良, 李达. FPGA配置片反熔丝PROMs加速器地面单粒子效应特性研究[J]. 原子核物理评论, 2016, 33(3): 358-364. doi: 10.11804/NuclPhysRev.33.03.358
GENG Chao, LI Xiaoyuan, LIN Yi, LUO Chunhua, XIE Wengang, DENG Yuliang, LI Da. Investigation Single Event Effects Characterization on Configuration PROMs of FPGA Induced by Heavy Ions[J]. Nuclear Physics Review, 2016, 33(3): 358-364. doi: 10.11804/NuclPhysRev.33.03.358
Citation: GENG Chao, LI Xiaoyuan, LIN Yi, LUO Chunhua, XIE Wengang, DENG Yuliang, LI Da. Investigation Single Event Effects Characterization on Configuration PROMs of FPGA Induced by Heavy Ions[J]. Nuclear Physics Review, 2016, 33(3): 358-364. doi: 10.11804/NuclPhysRev.33.03.358
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