摘要: 针对0.13 μm CMOS（Complementary Metal-Oxide-Semiconductor）体硅外延工艺下FPGA（Field Programmable Gate Arrays）配置片反熔丝PROM（Programmable-Read-Only-Memory）进行了单粒子效应（Single Event Effects SEEs）的加速器地面模拟试验研究。以PROM的存储容量、数据类型和工艺差异性为研究变量，考核与验证其在不同种类和能量粒子入射的系列性加速器地面SEEs模拟试验。研究结果表明，相对于8 Mbits PROM而言，空片16 Mbits PROM抗辐射性能最优，且从翻转饱和截面上说，16 Mbits的PROM具备更高的可靠性，优于国外同系列的芯片类型，试验用PROM芯片的单粒子锁定阈值>99.0 MeV·cm²/mg。另一方面，研究0.13 μm CMOS普通与深阱工艺技术下PROM芯片单粒子翻转效应异同性的实验数据表明，在高LET（Linear Energy Transfer）处的两者抗辐射性能并无明显变化，但是低LET处（LET翻转阈值）的加固效果较为明显，即抗辐射技术能力主要体现在LET翻转阈值的提升而非翻转截面的减小。

Single event effects (SEEs) have been characterized and investigated on one-time configured devices for field-programmable-gate-arrays (FPGA) of programmable-read-only-memory (PROM) in 0.13 μm Complementary Metal-Oxide-Semiconductor (CMOS) technology.The variables of their memory size,written data and technology have been taken into consideration as the key parameters affecting the SEEs sensitivity when testing and verifying the reliability/radiation tolerance on self-made PROMs by heavy ions.The results show that,16 Mbits PROM within blanked data has been studied that it has better performance to radiation tolerance as compared with the 8 Mbits PROMs.Additionally,16 Mbits PROMs have the higher reliability,if based on the viewpoint of the saturated single event upset cross-section.To the single event latchup,16 Mbits PROMs were exposed to a total fluence of 107 ions/cm² at the linear energy transfer (LET) of 99.0 MeV·cm²/mg and no obvious fluctuation of current has been observed.Additionally,as comparing the zone of high LET value,0.13 μm CMOS transistors with deep-well technology present a better radiation hardened approach than normal technology,especially in improving the threshold of LET at the zone of low LET value.