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Si中掺杂原子的瞬间增强扩散现象及抑制方法

刘昌龙

刘昌龙. Si中掺杂原子的瞬间增强扩散现象及抑制方法[J]. 原子核物理评论, 2001, 18(3): 164-168. doi: 10.11804/NuclPhysRev.18.03.164
引用本文: 刘昌龙. Si中掺杂原子的瞬间增强扩散现象及抑制方法[J]. 原子核物理评论, 2001, 18(3): 164-168. doi: 10.11804/NuclPhysRev.18.03.164
LIU Chang-long. Study of Transient Enhanced Dopant Diffusion in Silicon and Proposed Limiting Methods[J]. Nuclear Physics Review, 2001, 18(3): 164-168. doi: 10.11804/NuclPhysRev.18.03.164
Citation: LIU Chang-long. Study of Transient Enhanced Dopant Diffusion in Silicon and Proposed Limiting Methods[J]. Nuclear Physics Review, 2001, 18(3): 164-168. doi: 10.11804/NuclPhysRev.18.03.164

Si中掺杂原子的瞬间增强扩散现象及抑制方法

doi: 10.11804/NuclPhysRev.18.03.164

Study of Transient Enhanced Dopant Diffusion in Silicon and Proposed Limiting Methods

  • 摘要: 简要地介绍了单晶Si中注入掺杂原子在热激活退火中发生的瞬间增强扩散现象 ,综述了该现象发生的可能的微观机制和目前提出的几种抑制方法 ,展望了高能重离子在该领域的应用前景.The transient enhanced diffusion in crystalline silicon implanted with dopants and followed by high temperature annealing to activate the dopants is introduced. The physical mechanisms of transient enhanced dopant diffusion are then reviewed together with a short introduction to the proposed suppressing methods. Finally, the perspectives with using high energy heavy ions in this field are briefly discussed.
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出版历程
  • 收稿日期:  1900-01-01
  • 修回日期:  1900-01-01
  • 刊出日期:  2001-09-20

Si中掺杂原子的瞬间增强扩散现象及抑制方法

doi: 10.11804/NuclPhysRev.18.03.164

摘要: 简要地介绍了单晶Si中注入掺杂原子在热激活退火中发生的瞬间增强扩散现象 ,综述了该现象发生的可能的微观机制和目前提出的几种抑制方法 ,展望了高能重离子在该领域的应用前景.The transient enhanced diffusion in crystalline silicon implanted with dopants and followed by high temperature annealing to activate the dopants is introduced. The physical mechanisms of transient enhanced dopant diffusion are then reviewed together with a short introduction to the proposed suppressing methods. Finally, the perspectives with using high energy heavy ions in this field are briefly discussed.

English Abstract

刘昌龙. Si中掺杂原子的瞬间增强扩散现象及抑制方法[J]. 原子核物理评论, 2001, 18(3): 164-168. doi: 10.11804/NuclPhysRev.18.03.164
引用本文: 刘昌龙. Si中掺杂原子的瞬间增强扩散现象及抑制方法[J]. 原子核物理评论, 2001, 18(3): 164-168. doi: 10.11804/NuclPhysRev.18.03.164
LIU Chang-long. Study of Transient Enhanced Dopant Diffusion in Silicon and Proposed Limiting Methods[J]. Nuclear Physics Review, 2001, 18(3): 164-168. doi: 10.11804/NuclPhysRev.18.03.164
Citation: LIU Chang-long. Study of Transient Enhanced Dopant Diffusion in Silicon and Proposed Limiting Methods[J]. Nuclear Physics Review, 2001, 18(3): 164-168. doi: 10.11804/NuclPhysRev.18.03.164

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