250 keV He+ 离子注入钽酸锂改性研究
Modification of Lithium Tantalate Implanted by 250 keV He-ions
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摘要: 室温下，将能量为250 keV He+ 离子注入z 切钽酸锂单晶，注量范围5.0x1014~5.0x1016 He+/cm2，应用三维轮廓仪、X射线衍射(XRD)、紫外可见(UV-Vis ) 光学吸收谱对未注入和注入样品进行了表征和分析。分析结果表明，在注量达到5.0x1016He+/cm2 时，样品表面出现大量凸起条纹，同时晶格沿着001 方向出现明显肿胀，吸收边则表现出明显的注量相关性。注入样品在空气中放置60 d后，最高注量的样品表面原来凸起的条纹变为细长的裂纹，晶格应变及光学吸收边均出现较大的恢复。讨论了样品表面形貌、晶格应变和光学吸收边与He 行为的关系。The effects of 250 keV He + implantation in the fluence from 5.0x1014 to 5.0x1016 He+/cm2 on lithium tantalate at room temperature were investigated by 3D surface profiler, XRD and UV-Vis optical absorption spectroscopies.The experimental results show that a large number of raised stripes appear on the surface of the sample and the significant lattice swelling occurs along the direction 001 at the fluence of 5.0x1016 He+/cm2. The dependence of changes absorption edge on the fluences was revealed. After the samples had been exposed to the air for 60 days, the raised stripes on the surface have evolved into narrow cracks. Furthermore, the lattice strain and the optical absorption edge has also recovered dramatically. The relationship between surface morphology, lattice strain, optical absorption edge and behavior
of He-ions was discussed.Abstract: The effects of 250 keV He + implantation in the fluence from 5.0x1014 to 5.0x1016 He+/cm2 on lithium tantalate at room temperature were investigated by 3D surface profiler, XRD and UV-Vis optical absorption spectroscopies.The experimental results show that a large number of raised stripes appear on the surface of the sample and the significant lattice swelling occurs along the direction 001 at the fluence of 5.0x1016 He+/cm2. The dependence of changes absorption edge on the fluences was revealed. After the samples had been exposed to the air for 60 days, the raised stripes on the surface have evolved into narrow cracks. Furthermore, the lattice strain and the optical absorption edge has also recovered dramatically. The relationship between surface morphology, lattice strain, optical absorption edge and behavior
of He-ions was discussed.
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