Abstract: Schottky diodes are fabricated using 100 µm thick 4H-SiC epitaxial wafers with Ohmic and Schottky contacts, and packaged as SiC detectors to meet the requirements of high temperature and radiation environments. The current-voltage (I-V) curves are measured in the range of 25 to 150 ºC. The experimental results show that the leakage current changes very little when the temperature is less than or equal to 105 ºC. The change rate of leakage current is 0.33%/ºC, when the reverse bias is −500 V and the temperature rises from 25 to 105 ºC. The SiC detector is irradiated by ⁶⁰Co source in Peking University. The I-V characteristics of the SiC detector are compared before and after the irradiation experiment with total dose of 1 Mrad. The experimental data indicates that the leakage current has almost no significant change.