高级检索

736 AMeV 28Si与C靶作用弹核碎片发射角研究

Study on the Emission Angle of Projectile Fragment in the Interaction of 736 AMeV 28Si with C Target

  • 摘要: 利用CR-39探测器、HSP-1000高速成像显微镜和PitFit径迹分析软件研究了中高能28Si与C靶反应产生的弹核碎片角分布。通过束流照射、化学蚀刻以及径迹重建等实验过程,首次给出了能量为736 AMeV 28Si与C靶反应弹核碎片发射角分布的实验结果,并与能量在800和775 AMeV下28Si与C靶反应产生的弹核碎片发射角分布进行比较。结果表明,弹核碎片发射角分布的平均值和宽度大于28Si束流粒子散射角分布的平均值和宽度;大多数弹核碎片发射角小于2.0度,很少有发射角大于2.0度;不同电荷数Z的弹核碎片发射角平均值范围在1.0度以内,其角分布平均值和宽度随碎片电荷数Z的增加总体呈现减小的趋势。

     

    Abstract: The angular distributions of projectile fragments produced in the interaction of 28Si with C target are studied via CR-39 detectors, HSP-1000 high speed imaging microscope and PitFit track analysis software. By performing beam irradiation, chemical etching, track reconstruction and other experimental steps, the experimental results on the emission angle distribution of projectile fragments from the reaction of 28Si with C target at 736 AMeV are presented for the first time, and are compared with those obtained from reactions of 28Si with C target at 800 and 775 AMeV. The results show that the average value and width of the emission angle distribution of projectile fragments are greater than those of the scattering angle distribution of 28Si beam particles. Most of the emission angles of projectile fragments are less than 2.0 degrees, and rarely exceed this value. The average emission angle of projectile fragments with different charge number Z falls within a range of 1.0 degree, and both the average value and width of their angular distribution generally show a decreasing trend as the fragment charge number Z increases.

     

/

返回文章
返回