Abstract:
SiC DT-MOSFET are prone to single event burnout(SEB) effect under heavy ion incident conditions. In this work, the TCAD program is used to simulate and calculate the spatial distribution of physical quantities such as drain curren, current densityt, lattice temperature, collision ionization and power density inside the device, and evaluate the influence of bias voltage on SEB effect. According to the simulation results, the transient current source formed by the incident ions turns on the parasitic bipolar transistor, the high drain source voltage maintains the avalanche effect in the device, and then the positive feedback mechanism of the device is established. Finally, the generated transient high current leads to the thermal damage of the device. Therefore, the main cause of SEB effect in SiC DT-MOSFET is the conduction of parasitic bipolar transistor and the establishment of positive feedback mechanism. In addition, the effect of strong electric field on collision ionization, lattice temperature and power density distribution is evaluated, and the reason why the peak region of power density corresponds to the peak region of lattice temperature is revealed, which provides data support for the anti nuclear reinforcement technology of SiC DT-MOSFET.
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