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质子轰击钨靶表面时的电子发射产额与靶温度的相关性研究

Study on the Correlation Between Electron Emission Yield and Temperature of Tungsten Target Bombarded by H+ Ion

  • 摘要: 在中国科学院近代物理研究所兰州重离子加速器国家实验室测量了能量为50~250 keV 的质子入射不同温度下钨靶表面的电子发射产额。实验结果发现,不同能量的质子引起的电子发射产额均随着靶温度的升高而降低;利用功函数对温度的依赖性定性地解释了该结果。在不同靶温度下,总电子发射产额与电子能损的比值随着质子能量的增加而逐渐变小;利用靶原子不同壳层中电子之间的电离竞争机制来解释实验结果。

     

    Abstract: The electron emission yield of protons with an energy range of 50~250 keV incident on tungsten surface of a target at different temperatures are measured on the 320 kV electron cyclotron resonance ion source(ECRIS) platform of the Institute of Modern Physics, Chinese Academy of Science(IMP, CAS) in Lanzhou. It is shown that the electron emission yield induced by protons with different energies decreases with the increase of target temperature. The results were qualitatively explained by the temperature dependence of the work function. At different target temperatures, the ratio of total electron emission yield to electronic stopping power decreases with the increase of incident ion energy. The ionization competition between electrons in different shells of the target atom is used to explain the experimental results.

     

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