Abstract: Enhanced low-dose-rate sensitivity (ELDRS), with more degradation occurring at low dose rate for bipolar transistors and integrated circuits (ICs), is considered to be one of the major concerns for total ionizing dose hardness-assurance testing intended for space missions. In this paper, the research progress of ELDRS effect and low dose rate accelerated evaluation technology are reviewed. Combined with the difficult issues of ELDRS effect, the latest research results on ELDRS effect are given. The results from temperature-switching irradiation (TSI) are shown to be conservative with respect to low dose rates irradiation, and the irradiation time can be shorten from 7.7 months to 11 hours. And also the TSI for estimating ELDRS can be applied the SET (Single Event Transients) effect of bipolar circuits with low dose rate irradiation. Similarly, a conservative and rapid evaluation results can be obtained.