Geant4模拟δ电子对单粒子翻转的影响
Impact of Deltaelectrons on Singleevent Upsets with Geant4 Simulation
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摘要: 利用Geant4蒙特卡洛程序包， 基于RPP (Rectangular ParallelePiped Volume)模型构建SRAM器件单元的灵敏体积， 编写了重离子在器件材料中的输运程序和单粒子翻转截面计算方法， 得到了简化器件结构的单粒子翻转截面σ与线性能量转移LET的关系曲线， 计算得到的翻转LET阈值和饱和截面与实验结果基本一致。模拟获得了LET值为99.69 MeV/(cm-2·mg)的Bi离子及LET值为69 MeV/(cm-2·mg)的Bi离子和Xe离子在器件材料中产生的δ电子分布图像，讨论了δ电子分布对翻转截面的影响。 计算了灵敏体积中能量沉积与δ电子分布的关系，认为δ电子分布对单粒子效应的影响随着器件的特征尺寸减小将更加严重。In this paper, the sensitive volume of SRAMs was constructed based on RPP(Rectangular ParallelePiped Volume) model using the Monte-Carlo code Geant4. The interactions of heavy ion with materials and the SEU(Single Event Upset) cross section calculation method were presented in the program. The SEU crosssection curves with the linear energy deposition ware obtained. The SEU threshold value and saturation cross section were consistent with the testing data with heavy ions beam. The δ electrons distribution were different in the device material, which were generated by Bi ion with LETs of 99.67 MeV/(cm2·mg) and Bi ion, Xe ion with LETs of 69 MeV/(cm-2·mg). These results indicate δ electrons distribution impacts on the SEU cross section. According to the relation of energy deposition in the sensitive volume, the δ electrons distribution have more and more important effect on the Single Event Effect with reducing the feature size of semiconductor devices.Abstract: In this paper, the sensitive volume of SRAMs was constructed based on RPP(Rectangular ParallelePiped Volume) model using the Monte-Carlo code Geant4. The interactions of heavy ion with materials and the SEU(Single Event Upset) cross section calculation method were presented in the program. The SEU crosssection curves with the linear energy deposition ware obtained. The SEU threshold value and saturation cross section were consistent with the testing data with heavy ions beam. The δ electrons distribution were different in the device material, which were generated by Bi ion with LETs of 99.67 MeV/(cm2·mg) and Bi ion, Xe ion with LETs of 69 MeV/(cm-2·mg). These results indicate δ electrons distribution impacts on the SEU cross section. According to the relation of energy deposition in the sensitive volume, the δ electrons distribution have more and more important effect on the Single Event Effect with reducing the feature size of semiconductor devices.
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