双面硅多条探测器的测试
Test of Double-sided Multistrip Silicon Detectors
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摘要: 介绍了由中国科学院近代物理研究所和北京大学微电子研究院联合研制的双面硅多条探测器的初步测试过程及测试结果。测试内容包括： 探测器的电特性、 能量分辨率、 二维能谱、 条间串扰（crosstalk）。在-25 V全耗尽偏压下， 各条的反向漏电流均小于10 nA， 对于5.486 MeV的α粒子， 正面各条的能力分辨率在1.5%左右， 条间串扰在6%左右； 背面各条能量分辨率稍差， 在3%左右， 其条间串扰在1%左右。同时对进口的Micron BB1直流耦合单边读出的双面硅条探测器做了相同测试， 并进行了性能对比。The testing of a doubled-sided multi-strip silicon detector manufactured by Institute of Modern Physics of CAS and Peking University were introduced. The electrical characteristics and energy resolution, twodimensional spectrum, crosstalk were presented. The reverse leak current of each strip is smaller than 10 nA under bias voltage of 25 V. The energy resolution of strips on the front side is about 1.5%, but a little worse for the backside strips, about 3%. The level of crosstalk is about 6% for the front side, 1% for the backside. Same tests were carried out on the commercial Micron BB1 detector and a comparison was presented.Abstract: The testing of a doubled-sided multi-strip silicon detector manufactured by Institute of Modern Physics of CAS and Peking University were introduced. The electrical characteristics and energy resolution, twodimensional spectrum, crosstalk were presented. The reverse leak current of each strip is smaller than 10 nA under bias voltage of 25 V. The energy resolution of strips on the front side is about 1.5%, but a little worse for the backside strips, about 3%. The level of crosstalk is about 6% for the front side, 1% for the backside. Same tests were carried out on the commercial Micron BB1 detector and a comparison was presented.
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