蒙特卡罗方法在低能电子致原子内壳层电离截面测量中的应用

Application of Monte Carlo Simulations in Measurement of Atomic Inner-shell Ionization Cross-sections by Low-energy Electron Impact

摘要: 在Monte Carlo方法模拟keV电子碰撞薄膜／厚衬底靶过程中，输入材料数据中采用的内壳层电离截面数据不同，得到的反映膜厚及村底对电离截面测量结果影响的修正因子值也有差别。讨论了Monte Carlo模拟得到的修正因子值受输入材料数据中内壳层电离截面影响的程度，并完成了入射keV电子在法拉第筒中逃逸率的估算工作。 The sensitivity of the correction factor, which describes the combined effect of finite film thickness and the thick substrate in the measurement of atomic inner-shell ionization cross-sections by low-energy electron impact, to the adopted ionization cross-sections in the Monte Carlo simulation is discussed. Moreover, the electron escape ratio from the Faraday cup in our experiment is also obtained by Monte Carlo method.

Abstract: The sensitivity of the correction factor, which describes the combined effect of finite film thickness and the thick substrate in the measurement of atomic inner-shell ionization cross-sections by low-energy electron impact, to the adopted ionization cross-sections in the Monte Carlo simulation is discussed. Moreover, the electron escape ratio from the Faraday cup in our experiment is also obtained by Monte Carlo method.