铋纳米管电子性质的第一原理研究

A First Principle Study on Electronic Property of Bismuth Nanotubes

摘要: 运用第一原理分子动力学方法系统研究了铋纳米管的稳定性和电子性质 .发现铋纳米管的应变能 (StrainEnergy)符合经典的 1/R2 规律 .铋纳米管的能隙在 0 .7— 0 .8eV左右 ,具有半导体的特性. A first principle molecular dynamics with density functional theory and ultra-soft pseudopotential has been performed on the bismuth nanotubes. The strain energies are found to follow the classical 1/R 2 strain law. The bismuth nanotubes are expected as semi-conductor with the band gaps around 0.7 - 0.8 eV.

Abstract: A first principle molecular dynamics with density functional theory and ultra-soft pseudopotential has been performed on the bismuth nanotubes. The strain energies are found to follow the classical 1/R 2 strain law. The bismuth nanotubes are expected as semi-conductor with the band gaps around 0.7 - 0.8 eV.