MeV高能离子注入Si的研究

Study on Implanted Silicon with MeV Ions

摘要: 综述了近年来低能核物理所开展ＭｅＶ高能离子注入Ｓｉ的研究概况．研究工作包括深注入掩埋层物理特性分析，新型增强退火研究，二次缺陷的抑制与消除，离子束缺陷工程新原理、新方法的建立和应用，注入杂质的叠加分布与计算等． This paper presents a briefing of the development of implanted silicon with MeV high energy ion at the BNU of late years. A lot of subjects are reviewed.

Abstract: This paper presents a briefing of the development of implanted silicon with MeV high energy ion at the BNU of late years. A lot of subjects are reviewed.