Damage Effects of CVD Single-layer MoS<sub>2</sub> Irradiated by <sup>209</sup>Bi Ions

WU Yang; SUN Youmei; LIU Jie; ZHAI Pengfei; GUO Hang; YAO Huijun; LIU Jiande; LUO jie

doi:10.11804/NuclPhysRev.35.01.072

The layer number of MoS₂ with different thickness was determined by the optical microscope and Raman spectra. And the damage effect of the CVD (chemical vapor deposition) prepared single-layer MoS₂ sample irradiated by ²⁰⁹Bi ions was analyzed by the combination of Raman analysis and AFM observations. With the increase of irradiation fluence, the Raman characteristic peaks of E_2g¹ and A_1g corresponding to both phonon vibration modes gradually bluely shift, and the intensity of the peaks obviously decreased. This is due to the fact that the ²⁰⁹Bi ion irradiation results in the latent track type lattice defects and they adsorb the oxygen molecules in the air ended with the p-type doping. Meanwhile, from the AFM image of the mono-layer of irradiated MoS₂ under the 5×10¹⁰ ions/cm², it can been seen that latent tracks mainly occur in the form of pits, which different from the hillock tracks observed by mechanical stripping method. The influence of different preparation technology to the track morphology is analyzed. Compared with the Raman and AFM results of MoS₂ prepared by mechanical stripping, it is considered that different preparation methods will affect the electron density in single or few layers of MoS₂.

Damage Effects of CVD Single-layer MoS₂ Irradiated by ²⁰⁹Bi Ions

1. Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;

2. University of Chinese Academy of Sciences, Beijing 100049, China

Funds: National Natural Science Foundation of China(11675233, 11690041)

Received Date: 2017-04-13

Rev Recd Date: 2017-04-25

Publish Date: 2018-03-20

Key words:

Abstract: The layer number of MoS₂ with different thickness was determined by the optical microscope and Raman spectra. And the damage effect of the CVD (chemical vapor deposition) prepared single-layer MoS₂ sample irradiated by ²⁰⁹Bi ions was analyzed by the combination of Raman analysis and AFM observations. With the increase of irradiation fluence, the Raman characteristic peaks of E_2g¹ and A_1g corresponding to both phonon vibration modes gradually bluely shift, and the intensity of the peaks obviously decreased. This is due to the fact that the ²⁰⁹Bi ion irradiation results in the latent track type lattice defects and they adsorb the oxygen molecules in the air ended with the p-type doping. Meanwhile, from the AFM image of the mono-layer of irradiated MoS₂ under the 5×10¹⁰ ions/cm², it can been seen that latent tracks mainly occur in the form of pits, which different from the hillock tracks observed by mechanical stripping method. The influence of different preparation technology to the track morphology is analyzed. Compared with the Raman and AFM results of MoS₂ prepared by mechanical stripping, it is considered that different preparation methods will affect the electron density in single or few layers of MoS₂.

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[1]	DESAI S B, MADHVAPATHY S R, SACHID A B, et al. Science, 2016, 354(6308):100.
[2]	WANG Guo dong, JIANG Li juan, LI Lai ping, et al. Chinese Molybdenum Industry, 2013, 37(5):10. (in Chinese) (王国栋, 蒋丽娟, 李来平, 等. 中国钼业, 2013, 37(5):10.)
[3]	RADISAVLJEVIC B, RADENOVIC A, BRIVIO J, et al. Nature nanotechnology, 2011, 6(5):10.
[4]	OCHEDOWSKI O, MARINOV K, WILBS G, et al. Journal of Applied Physics, 2013, 113(21):197.
[5]	HOPSTER J, KOZUBEK R, KRAMER J, et al. Nucl Instr Meth B, 2013, 317(12):165.
[6]	SUN Youmei, LIU Jie, WANG Zhiguang, et al. Nuclear Techniques, 2007, 30(4):342. (in Chinese) (孙友梅, 刘杰, 王志光, 等. 核技术, 2007, 30(4):342.)
[7]	ZHOU Chaoxun. Synthesis and optical properties of monolayer molybdenum disulfide[D]. Heifei:University of Science and Technology of China, 2015. (in Chinese) (周朝迅. 单层二硫化钼的制备及光学性质研究[D]. 合肥:中国科学技术大学, 2015.)
[8]	ZHENG S, SUN L, YIN T, et al. Applied Physics Letters, 2015, 106(6):682.
[9]	NAN H, WANG Z, WANG W, et al. Acs Nano, 2014, 8(6):5738.
[10]	CHAKRABORTY B, BERA A, MUTHU D V S, et al. Physical Review B, 2012, 85(16):396.
[11]	GUO H, SUN Y, ZHAI P, et al. Applied Physics A, 2016, 122(4):1.

Damage Effects of CVD Single-layer MoS₂ Irradiated by ²⁰⁹Bi Ions

doi: 10.11804/NuclPhysRev.35.01.072

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通讯作者: 陈斌, bchen63@163.com

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Damage Effects of CVD Single-layer MoS₂ Irradiated by ²⁰⁹Bi Ions

doi: 10.11804/NuclPhysRev.35.01.072

1. Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;

2. University of Chinese Academy of Sciences, Beijing 100049, China

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Damage Effects of CVD Single-layer MoS2 Irradiated by 209Bi Ions

doi: 10.11804/NuclPhysRev.35.01.072

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通讯作者: 陈斌, bchen63@163.com

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Damage Effects of CVD Single-layer MoS2 Irradiated by 209Bi Ions

doi: 10.11804/NuclPhysRev.35.01.072

1. Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China; 2. University of Chinese Academy of Sciences, Beijing 100049, China

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Damage Effects of CVD Single-layer MoS₂ Irradiated by ²⁰⁹Bi Ions

Damage Effects of CVD Single-layer MoS₂ Irradiated by ²⁰⁹Bi Ions

1. Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;

2. University of Chinese Academy of Sciences, Beijing 100049, China