Effect of Sulfurization Temperature on the Growth Quality of ZnS Thin Film

SONG Ligang; ZHU Te; CAO Xingzhong; ZHANG Rengang; KUANG Peng; JIN Shuoxue; ZHANG Peng; GONG Yihao; WANG Baoyi

doi:10.11804/NuclPhysRev.34.03.651

ZnS thin films have been prepared by sulfurizing zinc thin films deposited on glass substrate by magnetron sputtering for two hours. The microstructure defects, crystallizations and surface morphology of zinc films sulfurized at different temperature were analyzed by PAT (positron annihilation technique), XRD(X-ray diffraction) and SEM (Scanning electron microscopy), respectively. For analyzing the structure defect of four samples with different sulfurization temperature, PAT has been used to obtain the relative concentration of defects. With the positron energy range of 1.5~4.5 keV, the S parameter of ZnS films is minimum. It demonstrates that ZnS films produced at 445℃ have the minimum structural defect concentration and the highest density. XRD results show that films are blende structure with the preference of (111) orientation above 445℃. And from the result of SEM, because of ZnS films recrystallization, the crystal grains obviously become large and dense at 445℃.

Effect of Sulfurization Temperature on the Growth Quality of ZnS Thin Film

1. College of Science, Wuhan University of Science and Technology, Wuhan 430000, China;

2. Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China

Funds: National Natural Science Foundation of China (11505205, 11505192); Educational Department of Hubei Province(D20121109)

Corresponding author: 10.11804/NuclPhysRev.34.03.651

Received Date: 2016-12-06

Rev Recd Date: 2017-04-10

Publish Date: 2017-07-18

Key words:

Abstract: ZnS thin films have been prepared by sulfurizing zinc thin films deposited on glass substrate by magnetron sputtering for two hours. The microstructure defects, crystallizations and surface morphology of zinc films sulfurized at different temperature were analyzed by PAT (positron annihilation technique), XRD(X-ray diffraction) and SEM (Scanning electron microscopy), respectively. For analyzing the structure defect of four samples with different sulfurization temperature, PAT has been used to obtain the relative concentration of defects. With the positron energy range of 1.5~4.5 keV, the S parameter of ZnS films is minimum. It demonstrates that ZnS films produced at 445℃ have the minimum structural defect concentration and the highest density. XRD results show that films are blende structure with the preference of (111) orientation above 445℃. And from the result of SEM, because of ZnS films recrystallization, the crystal grains obviously become large and dense at 445℃.

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Effect of Sulfurization Temperature on the Growth Quality of ZnS Thin Film

doi: 10.11804/NuclPhysRev.34.03.651

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