Studies of Slow Highlycharged Ion Irradiated C<SUB>60</SUB> Films

FU Yun-chong; YAO Cun-feng; JIN Yun-fan

doi:10.11804/NuclPhysRev.27.02.223

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FU Yun-chong, YAO Cun-feng, JIN Yun-fan. Studies of Slow Highlycharged Ion Irradiated C60 Films[J]. Nuclear Physics Review, 2010, 27(2): 223-227. doi: 10.11804/NuclPhysRev.27.02.223

Citation:

FU Yun-chong, YAO Cun-feng, JIN Yun-fan. Studies of Slow Highlycharged Ion Irradiated C₆₀ Films[J]. Nuclear Physics Review, 2010, 27(2): 223-227. doi: 10.11804/NuclPhysRev.27.02.223

Studies of Slow Highlycharged Ion Irradiated C₆₀ Films

doi: 10.11804/NuclPhysRev.27.02.223

1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;2 Graduated University of Chinese Academy of Sciences, Beijing 100049, China

Received Date: 1900-01-01
Rev Recd Date: 1900-01-01
Publish Date: 2010-06-20

Abstract

In order to investigate the potential effect in the C60 films induced by slow highlycharged ion(SHCI), the irradiation experiments of C₆₀ films were performed by using Xen+ ions(n=3, 10, 13, 15, 17, 20, 22, 23). The irradiated C₆₀ films were analyzed by means of AFM and Raman scattering. The analysis results indicated that the surface roughness of C60 films irradiated is decreasing with the increase of the charge state of Xen+ ions(potential energy stored in Xen+ ions).This reveals the existing of the potential effect. The results of the Raman spectra showed that in despite of existing influence of potential effect, the damage process of C₆₀ films in the area for analysis depth of Raman is dominated by the elastic collisions, because the deposited potential energy of Xen+ ion in C₆₀ films is much less than its kinetic energy.
- slow highlycharged ion,
- C₆₀ film,
- potential effect
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通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

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Studies of Slow Highlycharged Ion Irradiated C₆₀ Films

doi: 10.11804/NuclPhysRev.27.02.223

1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;2 Graduated University of Chinese Academy of Sciences, Beijing 100049, China

Received Date: 1900-01-01
Rev Recd Date: 1900-01-01
Publish Date: 2010-06-20

Key words:

Abstract: In order to investigate the potential effect in the C60 films induced by slow highlycharged ion(SHCI), the irradiation experiments of C₆₀ films were performed by using Xen+ ions(n=3, 10, 13, 15, 17, 20, 22, 23). The irradiated C₆₀ films were analyzed by means of AFM and Raman scattering. The analysis results indicated that the surface roughness of C60 films irradiated is decreasing with the increase of the charge state of Xen+ ions(potential energy stored in Xen+ ions).This reveals the existing of the potential effect. The results of the Raman spectra showed that in despite of existing influence of potential effect, the damage process of C₆₀ films in the area for analysis depth of Raman is dominated by the elastic collisions, because the deposited potential energy of Xen+ ion in C₆₀ films is much less than its kinetic energy.

FU Yun-chong, YAO Cun-feng, JIN Yun-fan. Studies of Slow Highlycharged Ion Irradiated C60 Films[J]. Nuclear Physics Review, 2010, 27(2): 223-227. doi: 10.11804/NuclPhysRev.27.02.223

Citation:

FU Yun-chong, YAO Cun-feng, JIN Yun-fan. Studies of Slow Highlycharged Ion Irradiated C₆₀ Films[J]. Nuclear Physics Review, 2010, 27(2): 223-227. doi: 10.11804/NuclPhysRev.27.02.223