Effects of 80 keV N-ion Implantation on Structures of ZnO Films

ZANG Hang; WANG Zhi-guang; #; WEI Kong-fang; SUN Jian-rong; YAO Cun-feng; SHEN Tie-long; MA Yi-zhun; YANG Cheng-shao; PANG Li-long

doi:10.11804/NuclPhysRev.27.01.087

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Article Navigation > Nuclear Physics Review > 2010 > 27(1): 87-91

ZANG Hang, WANG Zhi-guang, #, WEI Kong-fang, SUN Jian-rong, YAO Cun-feng, SHEN Tie-long, MA Yi-zhun, YANG Cheng-shao, PANG Li-long. Effects of 80 keV N-ion Implantation on Structures of ZnO Films[J]. Nuclear Physics Review, 2010, 27(1): 87-91. doi: 10.11804/NuclPhysRev.27.01.087

Citation:

ZANG Hang, WANG Zhi-guang, #, WEI Kong-fang, SUN Jian-rong, YAO Cun-feng, SHEN Tie-long, MA Yi-zhun, YANG Cheng-shao, PANG Li-long. Effects of 80 keV N-ion Implantation on Structures of ZnO Films[J]. Nuclear Physics Review, 2010, 27(1): 87-91. doi: 10.11804/NuclPhysRev.27.01.087

Effects of 80 keV N-ion Implantation on Structures of ZnO Films

doi: 10.11804/NuclPhysRev.27.01.087

1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;2 Graduate University of Chinese Academy of Sciences, Beijing 100049, China

Received Date: 1900-01-01
Rev Recd Date: 1900-01-01
Publish Date: 2010-03-20

Abstract

ZnO thin films were implanted at the room temperature by 80 keV N-ions to 5.0×1014, 5.0×1015 or 5.0×1016 ions/cm2, the structural characteristics of the samples were investigated using X-ray diffraction(XRD) spectrometer and transmission electron microscopy(TEM). It was found that the un-implanted ZnO films are constituted of columnar crystals which are very compact and of preferred c-axis orientation. After N-ion implantation, the crystal lattice constant and the biaxial compressive stress increased with the increasing of the N-implantation dose. In the 5.0×1016 N-ions/cm2 implanted ZnO sample, a new XRD peak due to defects or N-dopants appeared. Moreover, defects and localized disordering in the 5.0×1015 N-ions/cm2 implanted ZnO films have been observed under high resolution TEM measurement. However, N-ion implantation could not change significantly the crystal structure of the ZnO films. Possible mechanism of the structural modification of ZnO films by N-ion implantation was briefly discussed.
- ZnO films,
- N-implantation,
- XRD,
- TEM
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通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

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Effects of 80 keV N-ion Implantation on Structures of ZnO Films

doi: 10.11804/NuclPhysRev.27.01.087

1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;2 Graduate University of Chinese Academy of Sciences, Beijing 100049, China

Received Date: 1900-01-01
Rev Recd Date: 1900-01-01
Publish Date: 2010-03-20

Key words:

ZnO films /
N-implantation /
XRD /
TEM

Abstract: ZnO thin films were implanted at the room temperature by 80 keV N-ions to 5.0×1014, 5.0×1015 or 5.0×1016 ions/cm2, the structural characteristics of the samples were investigated using X-ray diffraction(XRD) spectrometer and transmission electron microscopy(TEM). It was found that the un-implanted ZnO films are constituted of columnar crystals which are very compact and of preferred c-axis orientation. After N-ion implantation, the crystal lattice constant and the biaxial compressive stress increased with the increasing of the N-implantation dose. In the 5.0×1016 N-ions/cm2 implanted ZnO sample, a new XRD peak due to defects or N-dopants appeared. Moreover, defects and localized disordering in the 5.0×1015 N-ions/cm2 implanted ZnO films have been observed under high resolution TEM measurement. However, N-ion implantation could not change significantly the crystal structure of the ZnO films. Possible mechanism of the structural modification of ZnO films by N-ion implantation was briefly discussed.

Citation:

ZANG Hang, WANG Zhi-guang, #, WEI Kong-fang, SUN Jian-rong, YAO Cun-feng, SHEN Tie-long, MA Yi-zhun, YANG Cheng-shao, PANG Li-long. Effects of 80 keV N-ion Implantation on Structures of ZnO Films[J]. Nuclear Physics Review, 2010, 27(1): 87-91. doi: 10.11804/NuclPhysRev.27.01.087