Formation of New Texture ,in C-doped a:SiO2 after High Energy Xe Irradiation
doi: 10.11804/NuclPhysRev.23.02.189
- Received Date: 1900-01-01
- Rev Recd Date: 1900-01-01
- Publish Date: 2006-06-20
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Key words:
- (ion implantation /
- high-energy Xe ion irradiation /
- a:SiO2
Abstract: Amorphous silicon-dioxide (a:SiO2) films were firstly implanted at room temperature (RT) with 120 keV C-ions to doses ranging from 5.0 × 10^16 to 8.6 × 10^17 ion/cm^2, and then the C-doped a:SiO2 films were irradiated at RT with 1 754 MeV Xe ions to 1.0 × 10^11 and 5.0 × 10^11 ion/cm^2, respectively. The information of new tex- ture formation in the C-doped SiO2 films after high-energy Xe ion irradiation was investigated using micro-FTIR measurements. The obtained results showed that Si--C, C--C, Si--O--C bonds as well as CO and CO2 molecules were formed in the C-doped a-SiO2 films after Xe ion irradiation. Furthermore, Xe-ion irradiation induced a plenteous formation of Si--C bonds in the high dose C-ion implanted a:SiO2 films. Compared with the C-implanted sampies without Xe-ion irradiation and the low dose C-implanted samples with Xe-ion irraddiation, the enhanced and plenty of Si--C bond formation implied that the phase of SiC structures may be produced by Xe-ion irradiation in the high dose C-ion implanted a:SiO2 films.
Citation: | ZHAO Zhi-ming, WANG Zhi-guang, SONG Yin, JIN Yun-fan, SUN You-mei. Formation of New Texture ,in C-doped a:SiO2 after High Energy Xe Irradiation[J]. Nuclear Physics Review, 2006, 23(2): 189-193. doi: 10.11804/NuclPhysRev.23.02.189 |