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LI Hua. Statistic Analysis of Deposited Energy in Single Event Upset Induced by Neutrons[J]. Nuclear Physics Review, 2006, 23(1): 46-50. doi: 10.11804/NuclPhysRev.23.01.046
Citation: LI Hua. Statistic Analysis of Deposited Energy in Single Event Upset Induced by Neutrons[J]. Nuclear Physics Review, 2006, 23(1): 46-50. doi: 10.11804/NuclPhysRev.23.01.046

Statistic Analysis of Deposited Energy in Single Event Upset Induced by Neutrons

doi: 10.11804/NuclPhysRev.23.01.046
  • Received Date: 1900-01-01
  • Rev Recd Date: 1900-01-01
  • Publish Date: 2006-03-20
  • The process of the single event upset induced by 14 MeV neutrons in SRAM silicon chip is simulated by using a Monte Carlo method. The deposited energies in sensitive volumes in the chip, which is an important factor in the single event upset, are statistically analysed. The statistic information about the deposited energies is provided for understanding the detailed random process of the single event upset.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Statistic Analysis of Deposited Energy in Single Event Upset Induced by Neutrons

doi: 10.11804/NuclPhysRev.23.01.046

Abstract: The process of the single event upset induced by 14 MeV neutrons in SRAM silicon chip is simulated by using a Monte Carlo method. The deposited energies in sensitive volumes in the chip, which is an important factor in the single event upset, are statistically analysed. The statistic information about the deposited energies is provided for understanding the detailed random process of the single event upset.

LI Hua. Statistic Analysis of Deposited Energy in Single Event Upset Induced by Neutrons[J]. Nuclear Physics Review, 2006, 23(1): 46-50. doi: 10.11804/NuclPhysRev.23.01.046
Citation: LI Hua. Statistic Analysis of Deposited Energy in Single Event Upset Induced by Neutrons[J]. Nuclear Physics Review, 2006, 23(1): 46-50. doi: 10.11804/NuclPhysRev.23.01.046

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