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LIU Chang-long. He Ion Implantation Induced Bubbles in Silicon and Their Potential Applications[J]. Nuclear Physics Review, 2004, 21(3): 231-237. doi: 10.11804/NuclPhysRev.21.03.231
Citation: LIU Chang-long. He Ion Implantation Induced Bubbles in Silicon and Their Potential Applications[J]. Nuclear Physics Review, 2004, 21(3): 231-237. doi: 10.11804/NuclPhysRev.21.03.231
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He Ion Implantation Induced Bubbles in Silicon and Their Potential Applications

doi: 10.11804/NuclPhysRev.21.03.231

  • Department of Physics; School of Science; Tianjin University; Tianjin 300072; China

  • Received Date: 1900-01-01
  • Rev Recd Date: 1900-01-01
  • Publish Date: 2004-09-20
  • He ion implantation induced bubbles or cavities in silicon have been paid more and more attentions due to their potential applications in modern semiconductor technology. In this paper, He ion implantation induced formation and growth of bubbles in silicon together with their interactions with other defects were first briefly reviewed. Then the possible growth mechanisms of He bubbles in silicon and their potential applications in modern semiconductor technology were described. Finally, we presented the ke...
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He Ion Implantation Induced Bubbles in Silicon and Their Potential Applications

doi: 10.11804/NuclPhysRev.21.03.231
  • Department of Physics; School of Science; Tianjin University; Tianjin 300072; China
  • Received Date: 1900-01-01
  • Rev Recd Date: 1900-01-01
  • Publish Date: 2004-09-20

Abstract: He ion implantation induced bubbles or cavities in silicon have been paid more and more attentions due to their potential applications in modern semiconductor technology. In this paper, He ion implantation induced formation and growth of bubbles in silicon together with their interactions with other defects were first briefly reviewed. Then the possible growth mechanisms of He bubbles in silicon and their potential applications in modern semiconductor technology were described. Finally, we presented the ke...

LIU Chang-long. He Ion Implantation Induced Bubbles in Silicon and Their Potential Applications[J]. Nuclear Physics Review, 2004, 21(3): 231-237. doi: 10.11804/NuclPhysRev.21.03.231
Citation: LIU Chang-long. He Ion Implantation Induced Bubbles in Silicon and Their Potential Applications[J]. Nuclear Physics Review, 2004, 21(3): 231-237. doi: 10.11804/NuclPhysRev.21.03.231
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