Heavy Ion Induced Single Event Upset and Its Accelerator Simulation Investigation
doi: 10.11804/NuclPhysRev.13.01.032
- Received Date: 1900-01-01
- Rev Recd Date: 1900-01-01
- Publish Date: 1996-03-20
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Key words:
- single event upset /
- semiconductor device /
- heavy ion application
Abstract: The harm and investigation means of single event upset in spacecraft electronics are described and a survey of simulation test by using heavy ion accelerator is also given in this paper.
Citation: | Hou Ming-dong, Ma Feng, Liu Jie. Heavy Ion Induced Single Event Upset and Its Accelerator Simulation Investigation[J]. Nuclear Physics Review, 1996, 13(1): 32-35. doi: 10.11804/NuclPhysRev.13.01.032 |