[1] |
ECOFFET R. On-orbit anomalies: Investigations and root cause determination[C]//IEEE NSREC 2011 Short Course Notes, Section IV. USA: Institute of Electrical and Electronics Engineers Inc, 2011: 1198. |
[2] |
BESSOT D, VELAZCO R, Design of SEU-hardened CMOS Memory Cells: the HIT cell[C]//RADECS 93. Second European Conference on Radiation and its Effects on Components and Systems (Cat. No. 93TH0616-3). USA: Institute of Electrical and Electronics Engineers, Inc, 1993: 563. |
[3] |
WALDROP M M. Nature News, 2016, 530(7589): 144. doi: 10.1038/530144a |
[4] |
COLINGE J P. 3D Transistors[C]//2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA). USA: Institute of Electrical and Electronics Engineers, Inc, 2013: 2. |
[5] |
BANSAL A, MUKHOPADHYAY S, ROY K. IEEE Transactions on Electron Devices, 2007, 54(6): 1409. doi: 10.1109/TED.2007.895879 |
[6] |
SEIFERT N, JAHINUZZAMAN S, VELAMALA J, et al. IEEE Transactions on Nuclear Science, 2015, 62(6): 2570. doi: 10.1109/TNS.2015.2495130 |
[7] |
NSENGIYUMVA P, BALL D R, KAUPPILA J S, et al. IEEE Transactions on Nuclear Science, 2016, 63(1): 266. doi: 10.1109/TNS.2015.2508981 |
[8] |
FANG Y P, OATES A S. IEEE Transactions on Device and Materials Reliability, 2011, 11(4): 551. doi: 10.1109/TDMR.2011.2168959 |
[9] |
WU W, SEIFERT N. MBU-Calc: A Compact Model for Multi-bit Upset (MBU) SER Estimation[C]//2015 IEEE International Reliability Physics Symposium. USA: Institute of Electrical and Electronics Engineers, Inc, 2015: SE. 2.1-SE. 2.6. |
[10] |
QUINN H, GRAHAM P, Krone J, et al. IEEE Transactions on Nuclear Science, 2005, 52(6): 2455. doi: 10.1109/TNS.2005.860742 |
[11] |
ZhANG H, JIANG H, ASSIS T R, et al. IEEE Transactions on Nuclear Science, 2017, 64(1): 491. doi: 10.1109/TNS.2016.2637876 |
[12] |
NSENGIYUMVA P, MASSENGILL L W, KAUPPILA J S, et al. IEEE Transactions on Nuclear Science, 2018, 65(1): 223. doi: 10.1109/TNS.2017.2775234 |
[13] |
SRIM [EB/OL][2021-01-20]. http://www.srim.org. |
[14] |
HUBERT G, CAVOLI P L, FEDEICO C, et al. IEEE Transactions on Nuclear Science, 2015, 62(6): 2837. doi: 10.1109/TNS.2015.2496238 |