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莫莉华, 叶兵, 刘杰, 张战刚, 童腾, 孙友梅, 罗捷. 重离子在14-nm FinFET SRAM器件引起的单粒子翻转[J]. 原子核物理评论, 2021, 38(3): 327-331. DOI: 10.11804/NuclPhysRev.38.2021015
引用本文: 莫莉华, 叶兵, 刘杰, 张战刚, 童腾, 孙友梅, 罗捷. 重离子在14-nm FinFET SRAM器件引起的单粒子翻转[J]. 原子核物理评论, 2021, 38(3): 327-331. DOI: 10.11804/NuclPhysRev.38.2021015
Lihua MO, Bing YE, Jie LIU, Zhangang ZHANG, Teng TONG, Youmei SUN, Jie LUO. Single-event Upsets (SEUs) Induced by Heavy Ions in 14-nm FinFET SRAM[J]. Nuclear Physics Review, 2021, 38(3): 327-331. DOI: 10.11804/NuclPhysRev.38.2021015
Citation: Lihua MO, Bing YE, Jie LIU, Zhangang ZHANG, Teng TONG, Youmei SUN, Jie LUO. Single-event Upsets (SEUs) Induced by Heavy Ions in 14-nm FinFET SRAM[J]. Nuclear Physics Review, 2021, 38(3): 327-331. DOI: 10.11804/NuclPhysRev.38.2021015

重离子在14-nm FinFET SRAM器件引起的单粒子翻转

Single-event Upsets (SEUs) Induced by Heavy Ions in 14-nm FinFET SRAM

  • 摘要: 通过重离子实验研究了14-nm FinFET工艺静态随机存取存储器(SRAM)的单粒子翻转(SEU)特性。通过使用Weibull函数拟合SEU截面获得该器件的线性能量转移(LET)阈值:0.1 MeV/(mg/cm2)。对多位翻转(MBU)贡献的统计结果表明,当LET等于40.3 MeV/(mg/cm2)时,MBU的占比超过95%。此外,FinFET SRAM的SEU截面呈现出与Fin相关的入射角度的各向异性。该研究对基于FinFET工艺的抗辐射CMOS集成电路(IC)的设计具有一定的指导作用。

     

    Abstract: The characteristic of single-event upset(SEU) in a 14-nm bulk fin field-effect transistor (FinFET) static random access memory(SRAM) is investigated by heavy-ion experiments. The linear energy transfer(LET) threshold 0.1 MeV/(mg/cm2) is obtained by fitting the SEU cross-section using the Weibull function. The contribution of multiple-bit upset(MBU) is investigated. The results show that when the LET is equal to 40.3 MeV/(mg/cm2), greater than 95% of SEU comes from the MBU. Additionally, the SEU cross-section of the FinFET SRAM presents anisotropies for incident angles associated with the fin direction. This research has a certain kind of guiding role in designing of radiation-hardened complementary metal-oxide semiconductor(CMOS) integrated circuits(ICs) based on FinFET technology.

     

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