Digital Pulse Shape Discrimination for Silicon Detector
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摘要: 介绍了利用硅探测器的脉冲形状甄别进行粒子鉴别的原理。详细叙述了基于数字化方法的脉冲形状甄别的实现。采样频率和位数是数字化方法的两个重要参数。对于硅探测器信号，采用100 MS/s，12 bit的Digitizer可以满足脉冲形状甄别法对时间分辨的要求。同时对该方法粒子鉴别的特征和能量阈值做了简要的分析和对比。粒子背面入射硅探测器的所得的阈值低于正面入射的情况。例如对于氖周围的同位素，背面入射情况的阈值约为100 MeV，为正面入射情况下鉴别阈值的二分之一，相当与ΔE-E方法中ΔE探测器厚度约为60 μm情况下的阈值。最后定性讨论了硅探测器的电阻率不均匀性和沟道效应对粒子鉴别性能的影响。
In this paper Pulse Shape Discrimination(PSD) for silicon detector has been briefly introduced. The emerging digital method successfully applied to detector signal processing makes digital PSD method one of the most promising particle identification methods. Sampling frequency and the number of bits are two key parameters of digital method. For silicon detector signal, adopting 100 Ms/s, 12 bit Digitizer can satisfy the time resolution requirement of PSD method. The identification characteristic and energy threshold of this method have been discussed and compared with both front injection and rear injection cases. Energy threshold with rear injection usually is much lower than that with front injection. For example, around for Neon isotope energy threshold with rear injection is about 100 MeV which is only half of the threshold with front injection, also equivalent to thickness of about 60 μm silicon detector threshold in ΔE-E method. At the end the impact of silicon detector's resistivity nonuniformity and channel effect on the identification capacity of PSD method has been discussed in detail.Abstract: In this paper Pulse Shape Discrimination(PSD) for silicon detector has been briefly introduced. The emerging digital method successfully applied to detector signal processing makes digital PSD method one of the most promising particle identification methods. Sampling frequency and the number of bits are two key parameters of digital method. For silicon detector signal, adopting 100 Ms/s, 12 bit Digitizer can satisfy the time resolution requirement of PSD method. The identification characteristic and energy threshold of this method have been discussed and compared with both front injection and rear injection cases. Energy threshold with rear injection usually is much lower than that with front injection. For example, around for Neon isotope energy threshold with rear injection is about 100 MeV which is only half of the threshold with front injection, also equivalent to thickness of about 60 μm silicon detector threshold in ΔE-E method. At the end the impact of silicon detector's resistivity nonuniformity and channel effect on the identification capacity of PSD method has been discussed in detail. -
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