关键词: 
辐照诱变 /
累进辐照 /
效应 /
存活率 /
正突变率

摘要: 选用¹²C⁶⁺ 离子束对阿维链霉菌诱变选育高产菌株与原始菌株进行辐照诱变， 研究其累进辐照效应。实验结果表明，在辐照剂量为10 Gy时， 原始菌株比诱变高产菌株存活率高， 抗辐射能力强；辐照剂量高于30 Gy时，诱变高产菌株比原始菌株存活率高， 抗辐射能力强。原始菌株正突变率最高的辐照剂量为50 Gy， 致死率99.43%，正突变率最高, 达34.2%；对诱变高产菌株辐照剂量为30 Gy，致死率94.97%，正突变率最高, 达23.5% 。累进辐照效应降低了最佳辐照剂量。 Mutagenic effect on the mutant highproducing strain ZJAVY1203 and the original strain ZJAVA1 irradiated by ion beam of ¹²C⁶⁺ have been investigated. The experimental results indicated that the original strain has higher survival rate and stronger resistance to radiation than mutant highproducing Strain at dose of 10 Gy. The mutant highproducing strain has higher survival rate and stronger resistance to radiation than the original strain at the dose higher than 30 Gy. The lethality was 97% and the highest rate of orthomutation was 34.2%， when ZJAV A1 was irradiated by 50 Gy ¹²C⁶⁺ beam. The lethality was 94.97% and the highest rate of orthomutation was 23.5% when ZJAVY1203 was irradiated by 30 Gy ¹²C⁶⁺ beam. The best radiation dose is decreased by progressivity irradiation.