MeV能量的重离子辐照GaN的HRXRD研究

贾秀军; 张崇宏; 张丽卿; 杨义涛; 张勇; 韩录会; 徐超亮; 张利民

doi:10.11804/NuclPhysRev.28.03.332

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MeV能量的重离子辐照GaN的HRXRD研究

贾秀军, 张崇宏, 张丽卿, 杨义涛, 张勇, 韩录会, 徐超亮, 张利民

文章导航 > 原子核物理评论 > 2011 > 28(3): 332-336

贾秀军, 张崇宏, 张丽卿, 杨义涛, 张勇, 韩录会, 徐超亮, 张利民. MeV能量的重离子辐照GaN的HRXRD研究[J]. 原子核物理评论, 2011, 28(3): 332-336. doi: 10.11804/NuclPhysRev.28.03.332

引用本文:

JIA Xiu-jun, ZHANG Chong-hong, ZHANG Li-qing, YANG Yi-tao, ZHANG Yong, HAN Lu-hui, XU Chao-liang, ZHANG Li-min. A HRXRD Study of GaN Irradiated with MeV Heavy Ions[J]. Nuclear Physics Review, 2011, 28(3): 332-336. doi: 10.11804/NuclPhysRev.28.03.332

Citation:

JIA Xiu-jun, ZHANG Chong-hong, ZHANG Li-qing, YANG Yi-tao, ZHANG Yong, HAN Lu-hui, XU Chao-liang, ZHANG Li-min. A HRXRD Study of GaN Irradiated with MeV Heavy Ions[J]. Nuclear Physics Review, 2011, 28(3): 332-336. doi: 10.11804/NuclPhysRev.28.03.332

MeV能量的重离子辐照GaN的HRXRD研究

doi: 10.11804/NuclPhysRev.28.03.332

1 中国科学院近代物理研究所, 甘肃兰州 730000; 2 中国科学院研究生院, 北京100049)

A HRXRD Study of GaN Irradiated with MeV Heavy Ions

1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;2 Graduate University of Chinese Academy of Sciences, Beijing 100049, China

摘要: 分别进行了2.3 MeV²⁰Ne⁸⁺离子和5.0 MeV⁸⁴Kr¹⁹⁺离子辐照GaN样品的实验，并对实验样品进行了HRXRD的分析。结果发现，随着这两种离子辐照剂量的增大， GaN的HRXRD谱（0002）衍射峰的峰位出现了向小角侧有规律的移动，并在较高剂量时衍射峰发生分裂。同时，对衍射峰的峰位的移动和峰形的变化等现象反映的辐照损伤机制进行了研究，并探讨了电子能损与核能损各自在晶格损伤中的作用。
Irradiation experiments of gallium nitride (GaN) with 2.3 MeV²⁰Ne⁸⁺and 5.0 MeV⁸⁴Kr¹⁹⁺respectively were performed. The irradiated samples were analyzed using the high\|resolution X\|ray diffraction (HRXRD) spectrometry. It was found that the diffraction peak of GaN (0001) exhibited regular shift to smaller diffraction angles with the increase of ion fluence for the both ions， and the diffraction peak split into a few sub\|peaks at higher irradiation dose. Underlying mechanisms of the observed peak shift and split were investigated, the contributions of different energy losses to the damage accumulation in the irradiated GaN were discussed.
- GaN /
- HRXRD /
- 辐照损伤
Abstract: Irradiation experiments of gallium nitride (GaN) with 2.3 MeV²⁰Ne⁸⁺and 5.0 MeV⁸⁴Kr¹⁹⁺respectively were performed. The irradiated samples were analyzed using the high\|resolution X\|ray diffraction (HRXRD) spectrometry. It was found that the diffraction peak of GaN (0001) exhibited regular shift to smaller diffraction angles with the increase of ion fluence for the both ions， and the diffraction peak split into a few sub\|peaks at higher irradiation dose. Underlying mechanisms of the observed peak shift and split were investigated, the contributions of different energy losses to the damage accumulation in the irradiated GaN were discussed.
- GaN /
- HRXRD /
- irradiation damage

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MeV能量的重离子辐照GaN的HRXRD研究

doi: 10.11804/NuclPhysRev.28.03.332

1 中国科学院近代物理研究所, 甘肃兰州 730000; 2 中国科学院研究生院, 北京100049)

收稿日期: 1900-01-01
修回日期: 1900-01-01
刊出日期: 2011-09-20

关键词:

GaN /

HRXRD /

辐照损伤

摘要: 分别进行了2.3 MeV²⁰Ne⁸⁺离子和5.0 MeV⁸⁴Kr¹⁹⁺离子辐照GaN样品的实验，并对实验样品进行了HRXRD的分析。结果发现，随着这两种离子辐照剂量的增大， GaN的HRXRD谱（0002）衍射峰的峰位出现了向小角侧有规律的移动，并在较高剂量时衍射峰发生分裂。同时，对衍射峰的峰位的移动和峰形的变化等现象反映的辐照损伤机制进行了研究，并探讨了电子能损与核能损各自在晶格损伤中的作用。
Irradiation experiments of gallium nitride (GaN) with 2.3 MeV²⁰Ne⁸⁺and 5.0 MeV⁸⁴Kr¹⁹⁺respectively were performed. The irradiated samples were analyzed using the high\|resolution X\|ray diffraction (HRXRD) spectrometry. It was found that the diffraction peak of GaN (0001) exhibited regular shift to smaller diffraction angles with the increase of ion fluence for the both ions， and the diffraction peak split into a few sub\|peaks at higher irradiation dose. Underlying mechanisms of the observed peak shift and split were investigated, the contributions of different energy losses to the damage accumulation in the irradiated GaN were discussed.