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Kr离子注入SiC的拉曼光谱研究

徐超亮 张崇宏 李炳生 张丽卿 杨义涛 韩录会 贾秀军

徐超亮, 张崇宏, 李炳生, 张丽卿, 杨义涛, 韩录会, 贾秀军. Kr离子注入SiC的拉曼光谱研究[J]. 原子核物理评论, 2011, 28(2): 209-214. doi: 10.11804/NuclPhysRev.28.02.209
引用本文: 徐超亮, 张崇宏, 李炳生, 张丽卿, 杨义涛, 韩录会, 贾秀军. Kr离子注入SiC的拉曼光谱研究[J]. 原子核物理评论, 2011, 28(2): 209-214. doi: 10.11804/NuclPhysRev.28.02.209
XU Chao-liang, ZHANG Chong-hong, LI Bing-sheng, ZHANG Li-qing, YANG Yi-tao, HAN Lu-hui, JIA Xiu-jun. Raman Spectroscopy Study of Krimplanted Silicon Carbide[J]. Nuclear Physics Review, 2011, 28(2): 209-214. doi: 10.11804/NuclPhysRev.28.02.209
Citation: XU Chao-liang, ZHANG Chong-hong, LI Bing-sheng, ZHANG Li-qing, YANG Yi-tao, HAN Lu-hui, JIA Xiu-jun. Raman Spectroscopy Study of Krimplanted Silicon Carbide[J]. Nuclear Physics Review, 2011, 28(2): 209-214. doi: 10.11804/NuclPhysRev.28.02.209

Kr离子注入SiC的拉曼光谱研究

doi: 10.11804/NuclPhysRev.28.02.209

Raman Spectroscopy Study of Krimplanted Silicon Carbide

  • 摘要: 应用拉曼光谱研究了5 MeV Kr离子(注量分别为5×1013,2×1014,1×1015 ions/cm2)室温注入6HSiC单晶及其高温退火处理后结构的变化。 研究表明, 注入样品的拉曼光谱中不仅出现了Si—C振动的散射峰, 还产生了同核Si—Si键和C—C键散射峰。 Si—C散射峰强度随退火温度升高而增强, 当退火温度高达1000 ℃时, 已接近未辐照SiC的散射峰强度。晶体Si—Si键散射峰强度随退火温度变化不大, 而非晶Si—Si键散射峰强度随退火温度的增加逐渐消失。相对拉曼强度(Relative Raman Intensity, 简称RRI)随注量的增加逐渐减小并趋于饱和, 且不同退火温度样品的饱和注量不相同; RRI随退火温度的增加逐渐升高, 这在低注量样品中表现得尤为明显。 低、中、高3种注量样品的RRI随退火温度的增加从重合逐渐分离, 并且退火温度越高, 分离越大。 Raman spectroscopy was used to study the structure changes of 6HSiC single crystal implanted with 5 MeV Kr (Krypton) at room temperature and subsequently annealed at high temperature. The Raman spectrum of the implanted SiC displays not only Si—C bonds vibration peaks, but also homonuclear Si—Si and C—C bond vibration peaks. Si—C bond vibration peaks gradually strengthen with increasing temperature. When annealing at 1000 ℃, the peak intensity of Raman spectrum is close to that of virgin specimen. It is found that crystal Si—Si bond vibration peaks do not change when annealing, but amorphous Si—Si bond vibration peaks disappear with increasing annealing temperature. The Relative Raman Intensity (RRI) values decrease with increasing fluence and tend to saturate, but the saturation fluences is different for various anneal temperature. The RRI values increases with raising annealing temperature, which is more obvious in low implanted specimens. At the same time, the RRI values separate gradually with increasing temperature and this phenomenon is strengthened by annealing temperature.

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出版历程
  • 收稿日期:  1900-01-01
  • 修回日期:  1900-01-01
  • 刊出日期:  2011-06-20

Kr离子注入SiC的拉曼光谱研究

doi: 10.11804/NuclPhysRev.28.02.209

摘要:  应用拉曼光谱研究了5 MeV Kr离子(注量分别为5×1013,2×1014,1×1015 ions/cm2)室温注入6HSiC单晶及其高温退火处理后结构的变化。 研究表明, 注入样品的拉曼光谱中不仅出现了Si—C振动的散射峰, 还产生了同核Si—Si键和C—C键散射峰。 Si—C散射峰强度随退火温度升高而增强, 当退火温度高达1000 ℃时, 已接近未辐照SiC的散射峰强度。晶体Si—Si键散射峰强度随退火温度变化不大, 而非晶Si—Si键散射峰强度随退火温度的增加逐渐消失。相对拉曼强度(Relative Raman Intensity, 简称RRI)随注量的增加逐渐减小并趋于饱和, 且不同退火温度样品的饱和注量不相同; RRI随退火温度的增加逐渐升高, 这在低注量样品中表现得尤为明显。 低、中、高3种注量样品的RRI随退火温度的增加从重合逐渐分离, 并且退火温度越高, 分离越大。 Raman spectroscopy was used to study the structure changes of 6HSiC single crystal implanted with 5 MeV Kr (Krypton) at room temperature and subsequently annealed at high temperature. The Raman spectrum of the implanted SiC displays not only Si—C bonds vibration peaks, but also homonuclear Si—Si and C—C bond vibration peaks. Si—C bond vibration peaks gradually strengthen with increasing temperature. When annealing at 1000 ℃, the peak intensity of Raman spectrum is close to that of virgin specimen. It is found that crystal Si—Si bond vibration peaks do not change when annealing, but amorphous Si—Si bond vibration peaks disappear with increasing annealing temperature. The Relative Raman Intensity (RRI) values decrease with increasing fluence and tend to saturate, but the saturation fluences is different for various anneal temperature. The RRI values increases with raising annealing temperature, which is more obvious in low implanted specimens. At the same time, the RRI values separate gradually with increasing temperature and this phenomenon is strengthened by annealing temperature.

English Abstract

徐超亮, 张崇宏, 李炳生, 张丽卿, 杨义涛, 韩录会, 贾秀军. Kr离子注入SiC的拉曼光谱研究[J]. 原子核物理评论, 2011, 28(2): 209-214. doi: 10.11804/NuclPhysRev.28.02.209
引用本文: 徐超亮, 张崇宏, 李炳生, 张丽卿, 杨义涛, 韩录会, 贾秀军. Kr离子注入SiC的拉曼光谱研究[J]. 原子核物理评论, 2011, 28(2): 209-214. doi: 10.11804/NuclPhysRev.28.02.209
XU Chao-liang, ZHANG Chong-hong, LI Bing-sheng, ZHANG Li-qing, YANG Yi-tao, HAN Lu-hui, JIA Xiu-jun. Raman Spectroscopy Study of Krimplanted Silicon Carbide[J]. Nuclear Physics Review, 2011, 28(2): 209-214. doi: 10.11804/NuclPhysRev.28.02.209
Citation: XU Chao-liang, ZHANG Chong-hong, LI Bing-sheng, ZHANG Li-qing, YANG Yi-tao, HAN Lu-hui, JIA Xiu-jun. Raman Spectroscopy Study of Krimplanted Silicon Carbide[J]. Nuclear Physics Review, 2011, 28(2): 209-214. doi: 10.11804/NuclPhysRev.28.02.209

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