关键词: 
ZnO薄膜 /
N离子注入 /
X射线衍射 /
透射电镜

摘要: 室温下用80 keV N离子注入ZnO薄膜样品， 注量分别为5.0×1014， 5.0×1015和5.0×1016 ions/cm2， 然后用X射线衍射和透射电镜技术对样品的结构特性进行了表征。实验结果表明， 由高度(002)择优取向的致密柱状晶构成的薄膜中， 注入5.0×1015 ions/cm2时， 观测到缺陷生成和局域无序化现象， 但薄膜总体结构仍保持柱状晶和(002)择优取向； 随着注量的增大， 晶格常数c和压应力呈增大趋势。对注入N离子对ZnO薄膜结构特性的影响机理进行了简单的讨论。ZnO thin films were implanted at the room temperature by 80 keV N-ions to 5.0×1014, 5.0×1015 or 5.0×1016 ions/cm2, the structural characteristics of the samples were investigated using X-ray diffraction(XRD) spectrometer and transmission electron microscopy(TEM). It was found that the un-implanted ZnO films are constituted of columnar crystals which are very compact and of preferred c-axis orientation. After N-ion implantation, the crystal lattice constant and the biaxial compressive stress increased with the increasing of the N-implantation dose. In the 5.0×1016 N-ions/cm2 implanted ZnO sample, a new XRD peak due to defects or N-dopants appeared. Moreover, defects and localized disordering in the 5.0×1015 N-ions/cm2 implanted ZnO films have been observed under high resolution TEM measurement. However, N-ion implantation could not change significantly the crystal structure of the ZnO films. Possible mechanism of the structural modification of ZnO films by N-ion implantation was briefly discussed.