摘要:
选取高低两个LET点（40和60 keV/??m）, 剂量点分别为50, 100, 200, 400, 600 Gy进行辐照处理, 研究了生防菌的存活率与突变率的关系, 抑菌谱以及活性等。 结果表明, 在高LET条件下, 低剂量辐照就可以得到较多的突变体, 并且BJ1有较高的存活率和突变谱, 有利于筛选优良的正突变体。 因此高LET较低LET有更为明显的辐射诱变效应。
To explore the effects of different linear energy transfer(LET）of 12C6+ ion Beam irradiation on BJ1, survivals and biocontrol effects were cultured and treated with LET＝40 and 60 keV/μm at the doses of 50, 100, 200, 400 and 600 Gy, respectively. The results showed more mutations and biocontrol charts and higher survivals were obtained with high LET(60 keV/μm） irradiations at lower dose, which was useful to screen good positive mutations. Based on the results above, it could be concluded that the condition of high LET(60 keV/μm） had obvious mutagenic effects than that of low LET(40 keV/μm）.
Abstract:
To explore the effects of different linear energy transfer(LET）of 12C6+ ion Beam irradiation on BJ1, survivals and biocontrol effects were cultured and treated with LET＝40 and 60 keV/μm at the doses of 50, 100, 200, 400 and 600 Gy, respectively. The results showed more mutations and biocontrol charts and higher survivals were obtained with high LET(60 keV/μm） irradiations at lower dose, which was useful to screen good positive mutations. Based on the results above, it could be concluded that the condition of high LET(60 keV/μm） had obvious mutagenic effects than that of low LET(40 keV/μm）.
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